High temperature growth of InN on various substrates by plasma-assisted pulsed laser deposition

Stokker-Cheregi, F.; Nedelcea, A.; Filipescu, M.; Moldovan, A.; Colceag, D.; Ion, Valentin; Bı̂rjega, R.; Dinescu, M.

doi:10.1016/j.apsusc.2010.11.147

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…In 1972, Hovel and Cuomo 11 grew InN thin films on sapphire by using radio-frequency sputtering for the first time. With the development of thin film growth technology, researchers have obtained InN thin films using various techniques, such as hydride vapor phase epitaxy (HVPE), 12 metal organic chemical vapor deposition (MOCVD), 13 radio frequency plasma assisted molecular-beam epitaxy (RF-MBE), 14 pulsed laser deposition (PLD), 15,16 etc. However, it is still difficult to obtain high-quality InN due to its high equilibrium vapor pressure, low dissociation temperature of nitrogen and the lack of suitable substrates for InN.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Gao

Guan

et al. 2013

J. Mater. Res.

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InN films have been grown on sapphire substrates nitrided by N plasma with different durations by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). In-depth investigation reveals that AlN is generated on a sapphire surface during the nitridation, and 60 min nitridation helps in the formation of an ordered and flat AlN interlayer between the substrate and the InN film, which improves the surface migration of In atoms on the substrate, and consequently helps in obtaining a single-crystalline c-plane InN film of high quality with 1.0 Â 10 19 cm À3 carrier density and 1350 cm 2 /(VÁs) carrier mobility. Too short nitridation duration will result in a polycrystalline InN film, and too long nitridation duration will damage the surface quality of the newly generated AlN interlayer which consequently deteriorates the InN film quality. Control of the AlN interlayer quality plays a critical role in the growth of a high-quality InN epitaxial film on the sapphire substrate.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Gao

Guan

et al. 2013

J. Mater. Res.

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“…Authors to whom correspondence should be addressed: chongliu@ imech.ac.cn and jfan@imech.ac.cn growth temperature is indispensable for synthesizing some nanofilms. 34,35 However, when the substrate is maintained at a high temperature, the competition between the kinetic energy of adatoms and the surface binding energy complicates the dynamics of adsorbates near the growth interface, [36][37][38] which may cause atomic desorption and difficulty to control the composition. 39,40 Therefore, it is important to reveal the role of stoichiometry on the desorption behaviors at high temperatures, which will be the focus of our present work.…”

Section: Introductionmentioning

confidence: 99%

Temperature triggered stoichiometry-dependent desorption from the growth interface of nanofilm

Liu

Wang

Zheng

et al. 2018

Journal of Applied Physics

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In this study, the desorption behaviors of codeposited atoms from the growth interface of multicomponent-nanofilms have been explored through the experiments of vapor codeposition and molecular dynamics simulations. Experimentally, the stoichiometry-dependent desorption has been observed for atoms with weak surface binding, and it appears to be triggered by higher growth temperature, as inferred from the dependence of the amount of deposition on the stoichiometry of precursor films under different conditions. Numerically, we demonstrate that the sticking coefficient of weakly binding atoms depends strongly on the stoichiometry under high growth temperature. However, as the temperature decreases, the sticking coefficient becomes less sensitive to stoichiometry. The mechanisms associated with all the above phenomena have also been discussed. Published by AIP Publishing. https://doi.

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A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering

Bashir

Hassan

Ahmed

2017

J Mater Sci: Mater Electron

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High temperature growth of InN on various substrates by plasma-assisted pulsed laser deposition

Cited by 5 publications

References 10 publications

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Temperature triggered stoichiometry-dependent desorption from the growth interface of nanofilm

A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering

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