2010
DOI: 10.1016/j.sse.2010.05.026
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High-temperature modeling of AlGaN/GaN HEMTs

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Cited by 128 publications
(66 citation statements)
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“…Figure 4 shows the temperature distribution of GaN HEMTs. The hot spot on the drainside of the gate edge is in good agreement with several literatures (Kuball et al, 2006;Vitanov, Palankovski, Maroldt, & Quay, 2010). …”
Section:    supporting
confidence: 91%
“…Figure 4 shows the temperature distribution of GaN HEMTs. The hot spot on the drainside of the gate edge is in good agreement with several literatures (Kuball et al, 2006;Vitanov, Palankovski, Maroldt, & Quay, 2010). …”
Section:    supporting
confidence: 91%
“…Using corollary 2 in [39] we have found all local conservation laws for a heat conduction model for heat transfer in straight fins (19) and (20). Conservation laws are derived using the direct method when the thermal conductivity is given by the power law and by the method of multipliers when thermal conductivity is given as a linear function of temperature.…”
Section: Discussionmentioning
confidence: 99%
“…Indeed, thermal conductivity of some material such as Gellium Nitride (GaN) and Aluminium Nitride (AlN) can be modeled by the power law (see e.g. [20]). Furthermore, the experimental data indicates that the exponent of the power law for these materials is positive for lower temperatures and negative for at higher temperatures [21][22][23].…”
Section: Mathematical Modelsmentioning
confidence: 99%
See 1 more Smart Citation
“…Описание разработанных моделей приведено в рабо-тах [24,25]. При моделировании учитывались присут-ствие пассивирующего SiN-слоя на поверхности ГЭС и его влияние на концентрацию электронов в канале по модели, предложенной в работе [26].…”
Section: расчет Aln/gan-гетероструктур и транзисторовunclassified