High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide

Bahriz, M.; Lollia, G.; Баранов, А. Н.; Teissier, R.

doi:10.1364/oe.23.001523

Cited by 37 publications

(26 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Some progress in this field was achieved by exploiting InAs/AlSb material system. 6 On the other hand, ternary semiconductor compounds with heavier elements, in particular, HgCdTe, have (i) lower frequencies of optical phonons and (ii) variable bandgap energy covering the wide spectral range 0-1.6 eV. 1,7 This allows furthering the wavelength of radiation emission to VLWIR range, namely, 15-30 lm.…”

mentioning

confidence: 99%

Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

Morozov

Rumyantsev

Dubinov

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Articles you may be interested inTime resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures Appl. Phys. Lett. 105, 022102 (2014); 10.1063/1.4890416Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K Experimental evidence of long wavelength superluminescence (SL), i.e., amplification of spontaneous emission, in narrow gap HgCdTe bulk epitaxial film at 100 K is reported. Photoluminescence line narrowing is observed at 8.4 lm as pump power increases. However, plasmonic contribution to dielectric function is shown to be detrimental for light confinement at high pumping intensities, limiting the SL line intensity growth. The design of the structures optimal for obtaining stimulated emission in 10-36 lm range is further discussed. V C 2015 AIP Publishing LLC. [http://dx.

show abstract

mentioning

confidence: 99%

Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

Morozov

Rumyantsev

Dubinov

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The second substrate was a (100) silicon substrate with a 6° miscut towards the [110] direction. The 6° misfit was chosen to limit the formation of anti-phase domains appearing during the growth of III-V materials on non-polar group IV substrates 44 . Figure 1 presents scanning transmission electron microscopy (STEM) images of the QCL active zone grown on Si taken in the high angle annular dark field regime (HAADF) at different magnifications.…”

Section: Qcl Design and Epitaxial Growthmentioning

confidence: 99%

Quantum cascade lasers grown on silicon

Баранов

Nguyen-Van

Loghmari

et al. 2018

2018 International Conference Laser Optics (ICLO)

Self Cite

View full text Add to dashboard Cite

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/ AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.The 20th Century has seen unparalleled success of the silicon-based microelectronics industry, whereas the 21st Century is witnessing the explosion of photonics. Silicon photonics lies at the convergence of both fields and promises to be the next disruptive technology for integrated circuits 1 . This however requires that the whole set of optoelectronics functions be integrated onto a Si platform. While various Si-based modulators and photodetectors have already been demonstrated 2-5 , integrated light sources have for long remained a challenge 6 . Silicon-based sources would straight away bridge the gap but the indirect bandgap of Si or Ge is a severe limitation and, in spite of unquestionable advances [7][8][9][10] , such devices will not outperform in the foreseeable future their III-V semiconductor counterparts which remain the most efficient semiconductor laser technology. Much work has thus been devoted in the last decade to integrating III-V laser diodes on Si platforms for telecom applications. Impressive results have been achieved in the visible to near infrared wavelength range by both heterogeneous integration, where III-V materials are bonded to silicon [11][12][13][14] , and direct epitaxial growth of III-V laser diodes on Si substrates [15][16][17][18][19][20] . In parallel, extending silicon photonics toward the mid-infrared (MIR) wavelength spectral region (2-20 µm) has emerged as a new frontier 21 . Indeed, most molecules exhibit absorption fingerprints in the MIR range 22 , which is of crucial interest for societal applications such as health diagnostics, detection of biological and organic compounds, monitoring of toxic gases or of greenhouse gas emission, to name but a few. MIR Si photonics could thus lead to integrated, compact, cost-effective, smart spectroscopy instruments 21,23 . Several groups have already demonstrated...

show abstract

“…Quantum cascade lasers (QCLs) have become a very efficient and mature light source for the midto far-infrared [1]. Their wavelength coverage extends from 2.9 [2] to 20 µm [3] for room temperature operation and from 2.6 [4] to 200 µm [5] for cryogenic operation. The use of QCLs is particularly important for a wide range of gas sensing applications, owing to the fingerprints of many molecules in the MIR and FIR.…”

Section: Introductionmentioning

confidence: 99%

Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

et al. 2019

View full text Add to dashboard Cite

The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

show abstract

High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide

Cited by 37 publications

References 14 publications

Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

Quantum cascade lasers grown on silicon

Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Contact Info

Product

Resources

About