High temperature operation of silicon MOS transistors

Brown, Richard B.; Wu, Koucheng

doi:10.1007/978-1-4613-1197-3_4

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…High temperature integrated circuit (MOSFET amplifier operating at 300 °C [2] ) have been successfully fabricated. Since then, several high temperature sensors, switch and converters have been designed.…”

Section: Introductionmentioning

confidence: 99%

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Tournier

Bevilacqua

Brosselard

et al. 2010

MSF

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Looking back to the development of inverters using SiC switches, it appears that SiC devices do not behave like their silicon counterparts. Their ability to operate at high temperature makes them attractive. Developing drivers suitable for 200 °C operation is not straightforward. In a perspective of high integration and large power density, it is wise to consider a monolithic integration of the driver parts for the sake of reliability. Silicon is not suitable for high ambient temperature; silicon-oninsulator offers better performances and presents industrial perspectives. The paper focuses on a SiC BJT driver: it processes logical orders from outside, drives adequately the BJT to turn it either on or off, monitors the turn-off and turn-on state of the device, and acts accordingly to prevent failure. SiC BJT imposes specific performances different from the well known ones of SiC JFET or MOSFET. The paper addresses a preliminary analysis of a SOI driver, anticipating the behavior of SiC-BJT and the change in behavior at high temperature. A discret driver has been designed and fabricated. Elementary functional blocks have been validated, and a BJT converter successfully operated at high temperature with high efficiency ( = 88%).

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Section: Introductionmentioning

confidence: 99%