High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon

Cho, Yi Je; Lu, Kathy

doi:10.1016/j.corsci.2020.108795

Cited by 25 publications

(5 citation statements)

References 39 publications

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“…Its oxidation model is presented in Figure 11. The gas products contain CO, H 2 , and Si(OH) 4 4,40 The oxidation model of fiber in the air is similar except that the gas products are different.…”

Section: Discussionmentioning

confidence: 99%

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H₂O–O₂corrosion at 1000–1500°C

Wang

et al. 2023

J Am Ceram Soc.

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The near stoichiometric SiC fiber has been reported to play significant roles in the application of aeroengine field. An in‐depth understanding on the degradation mechanism of the fiber during its corrosion in air and under a simulated aeroengine environment (PH2O:PO2:PAr = 14:8:78 kPa) will shine a light on the performance evaluations of the near stoichiometric SiC fiber‐based materials as well as the development of their potential applications. In this study, X‐ray diffraction, scanning electron microscope, and FIB‐TEM were utilized to analyze the mechanical properties and microstructure of the fiber. After oxidation in dry air and Ar–H2O–O2 for 1 h, respectively, the fiber strength retention rate has been found to decrease with the increased oxidation temperature. The raise in oxidation temperature also led to the increase of the thickness and the crystallization rate of the oxide scale. The most different oxidation behaviors of SiC being treated under the simulated environment than in air are the lower oxidation activation energy and the higher crystallization activation energy for cristobalite. Water vapor can promote the oxidation reaction and inhibit the crystallization of cristobalite in the oxide scale. Few significant differences have been observed otherwise in the oxidation process and oxidation chromatography crystallization mechanism of fibers being treated under different conditions. The increase of oxide layer thickness and the formation of cristobalite impair the structural integrity and compactness of the oxide scale and thus lead to the deterioration of the mechanical properties of SiC fibers. Therefore, it is proposed that oxidation resistance of SiC fiber can be improved by insulating the reaction between the oxidizing agents and the SiC fiber or by increasing the crystallization temperature of cristobalite in the oxidation process and reducing the crystallization rate.

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Section: Discussionmentioning

confidence: 99%

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H₂O–O₂corrosion at 1000–1500°C

Wang

et al. 2023

J Am Ceram Soc.

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“…The binding energies observed were interpreted as a mixture of silicon oxycarbons with the following proposed compositions: SiO3C, SiO2C2, SiOC3. By XPS analysis of oxidized SiC used to coat TRISO fuel particles for nuclear applications, Cho and Lu [56] did not observe any free C at the SiC / SiO2 interface, instead some mixed Si-C and Si-O bonds.…”

Section: Interface Layer or Interphasementioning

confidence: 94%

Thermodynamic assessment of the different steps observed during SiC oxidation

Chatillon

Teyssandier

2022

Journal of the European Ceramic Society

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“…In another study by Cho and Lu. 126 , the kinetics of oxidation of SiC in argon, air and steam ambient was investigated. They showed that the thickness of the passivation oxide layer is largely dependent on the deposition time.…”

Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon

Cited by 25 publications

References 39 publications

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H₂O–O₂corrosion at 1000–1500°C

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H₂O–O₂corrosion at 1000–1500°C

Thermodynamic assessment of the different steps observed during SiC oxidation

Review—Gate Oxide Thin Films Based on Silicon Carbide

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High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon

Cited by 25 publications

References 39 publications

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H2O–O2corrosion at 1000–1500°C

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H2O–O2corrosion at 1000–1500°C

Thermodynamic assessment of the different steps observed during SiC oxidation

Review—Gate Oxide Thin Films Based on Silicon Carbide

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Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H₂O–O₂corrosion at 1000–1500°C

Degradation mechanism of near stoichiometric SiC fibers after air and Ar–H₂O–O₂corrosion at 1000–1500°C