High temperature performance of flexible SOI FinFETs with sub-20 nm fins

Abstract

We demonstrate a flexible version of the semiconductor industry's most advanced transistor topologyFinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-κ/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance flexible electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 °C). And we discuss the dependence of the I-V curves with temperature.