MANUSCRIPT TEXT IntroductionFlexible electronics has become an established field that has seen tremendous developments over the last years. [1][2][3][4][5][6][7][8][9][10] The unique capability to adjust the geometry of devices to curved surfaces or surfaces of changing shape provides vast advantages over conventional electronics on rigid substrates. Hence, flexible printed circuit boards have already become an industrial standard for medical implants or consumer electronics [11][12][13][14] , where the main requirements are: large area, extreme thinness, and conformity to curved surfaces. The recent progress of organic [6,15,16] as well as inorganic [14,17,18] electronics, which are basically performed using printing or thin film technologies, has been very beneficial for the improvement of flexing electronic devices. In combination with other methods like screen or inkjet printing, novel concepts for flexible electronics have been developed for several applications including displays, [19] organic light-emitting diodes, [20] sensors, [21][22][23][24][25] radio frequency identification tags, [26][27][28] and organic solar cells. [29] Meanwhile, there are increasing activities on flexible magnetic field sensors and magnetoelectronics, [30,31] due to ubiquitous use of such kinds of devices. [18,32] By now, high-performance magnetic sensors based on the giant magnetoresistive (GMR) effect and the tunneling magnetoresistive (TMR) effect are mainly prepared using thin film fabrication technologies. [18,[33][34][35][36][37][38][39] This method allows for fabricating extremely sensitive magnetic sensors, especially on Si substrates, and it would therefore be a desirable solution to flex the silicon substrate, where the magnetic elements are fabricated onto. Magnetic tunnel junctions (MTJs) are of particular interest, because they constitute the main component of diverse spintronic devices such as spin-transfer oscillators, magnetic sensors, hard-disk-drive read-heads or Magnetic Random Access Memories. [40] MTJs are made of a magnetic multilayer thin film material. For sensor applications, the low power consumption [41] , high sensitivity and small size make them an attractive option. MTJs with amorphous Al-oxide barriers exhibit TMR ratios below 100 %. This can be improved by using (001)-oriented MgO barriers, achieving TMR ratios over 150 % at room temperature. [42][43][44] These high values can be exploited to design very sensitive TMR sensors, [45][46][47][48][49][50] such as biomagnetic field sensors [51] . They show an important change in resistance versus the magnetic field than other sensors such as those utilizing the anisotropic magnetoresistance or giant magnetoresistance. [52][53][54] Compared to conventionally used Hall effect and AMR sensors, a TMR sensor can also have higher sensitivity, lower power consumption [41] , better temperature stability and, in particular, compared to an AMR sensor, a wider linear range can be obtained. [54] Flexible MTJ devices have been reported with alumina [37,39] and MgO t...

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The first time when we tossed this terminology seven years back, we thought reducing complexities in human life. Today we believe it more. However, smart living for all complicates the technological need further. As by all, we mean any age group, any academic background and any financial condition. Although electronics are powerful today and have enabled our digital world, many as of today have not experienced that progress. Going forward while we realize more and more electronics in our daily life, the most important question would be how. Here we show, a heterogeneous integration approach to integrate low-cost high performance interactive electronic system which are physically compliant. We are redesigning electronics to redefine its purposes to reconfigure life for all to enable smart living.

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We demonstrate a flexible version of the semiconductor industry's most advanced transistor topologyFinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-κ/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance flexible electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 °C). And we discuss the dependence of the I-V curves with temperature.