High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

Sevilla, G. A. Torres; Almuslem, Amani Saleh; Gümüş, Abdurrahman; Hussain, Aftab M.; Cruz, M.E. de la; Hussain, Muhammad Mustafa

doi:10.1063/1.4943020

Cited by 15 publications

(4 citation statements)

References 35 publications

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“…Thus, local bending stress induced stress affects the CMOS inverter, leading to the circuit performance fluctuations in the Si chip. Another example by Sevilla et al 189 reports thin (40 lm) and flexible (1.5 cm bending radius) Si based functional CMOS inverters whose characteristics show reduced performance for bending radii higher than 1.5 cm as shown in Figs. 11(c) and 11(d).…”

Section: Invertersmentioning

confidence: 99%

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Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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Section: Invertersmentioning

confidence: 99%

“…Some of ultra-thin CMOS inverters reported in the literature are summarized in Table VI. 186,[188][189][190][191] Only few of them have investigated the effect of bending stress on the performance. The performance of the thinned Si CMOS inverter circuit by Kino et al 191 degrades under bending stress, as shown in Fig.…”

Section: Invertersmentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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“…Recently, the discovery of single-crystal Si nanomembranes (SiNMs) has fascinated the flexible electronics community because of their high carrier mobility, stable chemical/thermal properties and flexibility. Particularly, SiNMs released from silicon-on-insulator (SOI) become one of the best choices owing to their outstanding electrical properties, mature fabrication techniques and commercial feasibility at relatively lower cost [10,11,12,13,14].…”

Section: Introductionmentioning

confidence: 99%

Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Zhang

et al. 2018

Nanomaterials

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Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

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“…With inherent limitations for the highly purified, expensive, and rigid substrates, there are obstacles for Si wafers for low-cost flexible electronics applications. Recently, flexible devices have been fabricated using Si membrane including tactile sensor for artificial skin applications, high-performance giant magnetoresistive sensory, and CMOS inverters . In the present work, proton-gated oxide synaptic transistors with multiple presynaptic inputs were self-assembled on flexible Si membranes.…”

Section: Introductionmentioning

confidence: 99%

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane

Zhu

Wan

Gao

et al. 2016

ACS Appl. Mater. Interfaces

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Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

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High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

Cited by 15 publications

References 35 publications

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane

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