High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

“…S6.0e+10 (2) where no free carrier concentration. From figure 3, it is evident that pt, 0 is at least three orders of magnitude higher than no.…”

The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

“…By contrast, as noted in figure 1, the carrier concentration of natural type lIb diamond doubles every 8%C near room temperature, and the saturation region is not approached until temperatures > 550 0 C. Some proponents of diamond electronic devices see its ability to operate at high-temperature as an asset [26, 42 -44] and, using a boron-doped synthetic diamond Geis et al [44] have demonstrated a Schottky diode rectifier which operated (albeit with curious hysteresis effects) at 700%C, and a point-contact transistor which exhibited power gain at 510°C. More sophisticated devices, they claim, could operate well above 1000*C. Tzeng et al [42] also reported that the Schottky diode they fabricated on natural semiconducting diamond showed well behaved current-voltage characteristics at temperatures up to 500%C.…”

Devices at High Temperatures—Status and Prospects

“…The first experiment reported in this direction was a W-Schottky contact on a low-boron-doped crystal, which could be operated up to 700 "C in air. 22 For quite some time the contact behavior had not been reproducible, and rectifying as well as ohmic behavior had been reported in the literature for the same metal, for example, Ti'8.23 and the main reason being insufficiently identified surface properties. After epitaxial growth in H2 carrier gas, the diamond surface will be H-terminated, forming acceptor states and roomtemperature-activated surface conduction by holes, with a sheet charge on the order of 10l3 cm-2.26 At temperatures above ca.…”