High-temperature point defects in CdS:Cu

Kukk, P. L.; Aarna, H. A.; Voogne, M. P.

doi:10.1002/pssa.2210630203

Cited by 19 publications

(3 citation statements)

References 7 publications

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“…Predominant copper defects in ZnSe : Cu : C1 (Ncu > Ncl) are similar to copper defects found in CdS : Cu from high-temperature conductivity and Cu solubility measurements [43]. to…”

Section: Resultssupporting

confidence: 64%

The structure of recombination centres in activated ZnSe phosphors

Kukk

Palmre

Mellikov

1982

phys. stat. sol. (a)

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The intensity of photoluminescence in ZnSe:Cu:Cl is measured in dependence of added Cu concentration. It is shown that the intensity of activated emission is a power function of the copper concentration in a large region (1017 to 1018 cm−3). The comparison of an experimental curve with the theoretical one permits to determine the structure of radiative and nonradiative recombination centres and predominant defects of Cu and Cl in ZnSe:Cu:Cl.

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“…Predominant copper defects in ZnSe : Cu : C1 (Ncu > Ncl) are similar to copper defects found in CdS : Cu from high-temperature conductivity and Cu solubility measurements [43]. to…”

Section: Resultssupporting

confidence: 64%

The structure of recombination centres in activated ZnSe phosphors

Kukk

Palmre

Mellikov

1982

phys. stat. sol. (a)

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“…Such a process is called doping. The principles of that kind of high-temperature experiments were described by Kroger [l] and were developed for A,Bg materials and conductive polymers by scientists at Tallinn Technical University [2,3]. As a typical example of the system of modification and investigation the electrical conductivity of the electronic materials, primarily the A,B¢ materials, is presented in Fig.…”

Section: High-temperature Electrical Conductivitymentioning

confidence: 99%

“…3. Cd vapour pressure dependence of defect concentrations for CdS:Cu (5% 10" cm™) at 800 °C [3]. also information on the thermodynamic properties of these structure elements (enthalpies, entropies) and the kinetic and transport properties of materials (activation energies of the electrical conductivity, diffusion coefficients) [3, s].…”

Section: High-temperature Electrical Conductivitymentioning

confidence: 99%

Thermodynamicmodelling of Electronic Materials

Mellikov¹,

Öpik²

1999

Proceedings of the Estonian Academy of Sciences. Chemistry

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The process of materials preparation is a typical physico-chemical process operated by classical physico-chemical parameters such as temperature, pressure, and the composition of materials. The review offers examples of how the thermodynamic modelling has been used for the characterization and preparation of two different types of electronic materialssemiconductive compounds and conductive polymers.

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The structure of radiative and non-radiative recombination centres in activated CdS phosphors

Kukk

Erm

1981

Phys. Stat. Sol. (a)

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The intensity of photoluminescence (PL) emission bands in quenched CdS: Cu: C1 powder samples is measured and i t turns out to be a power function of the concentrations of CI, Nci, and Cu, Ncur in the material. The simplifications in which case the quasichemical theory of defect formation in solids gives such a simple dependence are clarified. The method t o determine the structure of recombination centres in AIIBVI compounds, based on the comparison of experimental and theoretical graphs, is proposed. The method is used for clarifying the nature of rand k-PL centres (A, , , = 1030 n m and Amax = 780 nm, respectively) and s-centres of non-radiative recombination, and also predominant defects C1 and Cu in CdS:Cu: CI. The r-, k-and s-centres may be identified with the following defects of crystal lattice of CdS: r-centre -(CucdCls), k-centre -(Cued),;s-centre -(CUcdCUi)2 a t Ncu > Ncl and C1, a t Ncu < N a . The latter two turned out to be predominant defects of Cu and C1 a t corresponding relations of Ncu and Ncl. M3MepeHa KHTeHCIIBHOCTb aKTHBaTOPHbIX IIOJIOC @OTOJIlOMHHeCUeHUllll (@a) ,,MrHOBeH-HO" OXJIaXneHHblX~ 0 6 p a 3~0~ CdS: CU: C1, KOTOpaR OKa3aJIaCb CTeIleHHOfi @yHHUHeii OT CoDepwaWaxcR B MaTepMane HOHUeHTpaqIIfi C1, Ncl II CU, Ncu. BbIRCHeHbI YnpOUeHHR, IIpH H CTOJIL IIpOCTOB 3aBHCPlMOCTH. npeAJIOHceH MeTOA OnpeAeJIeHIIR CTPYHTYPbI UeHTpOB peHOM6IIHaUPlki B COeAIJHeHHRX AI1[BV1, OCHOBaHHbIfi Ha COIIOCTaBJIeHHH BbIUleOTMe9eHHbIX 3KCIIepIXMeHTaJIbHblX H TeOPeTH9eCKIIX rpa#HHOB. 3 T O T MeTOA HCTIOJIb30BaH &JIR YCTaHOB-JIeHMR IIpIIpOlZbI r-H k-qeHTpOB (Amax = 1030 n m 13 Amax = 780 nm, COOTBeTCTBeHHO) H S-UeHTpOB 6e3bI3JIyYaTeJlbHOn peKOM6IIHa~IIPl, a TaKXe nOMIIHEiPYlOUHX ne@e€CTOB C1 II Cu B CdS:Cu:Cl. I-, k-II S-IleHTPbI MOrYT 6bITb IIAeHTII@HUIIpOBaHbI CO CJIeAyIoIq-IIMII He@eKTaMH KpIICTaJIJIIIYeCKOfi PeIIIeTKH CdS : -r-UeHTp -(CUCdCls), k-UeHTp -(CUcd);, OAHOBpeMeHHO II ~OMIIHl3pylOUIIMII ne@eKTaMH CU II c1 IIpH COOTBeTCTBYIoIqL2X COOTHOILIe-HIIRX Ncu II Ncl. KOTOPbIX K B~~I I X H M I I Y~C K~R Teopm ne@eIcTOO6pa30BaHHR B TsepnbIx Teaax ~~I I B O~H T s-uemp -(CuCdCui)z n p~ Ncu > Ncl II Cls n p~ Ncu < Nc1. llocnenme m a O K~~~J I M C~ 1) Ehitajate tee 5, 200026 Tallin, USSR. 27'

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High-temperature point defects in CdS:Cu

Cited by 19 publications

References 7 publications

The structure of recombination centres in activated ZnSe phosphors

The structure of recombination centres in activated ZnSe phosphors

Thermodynamicmodelling of Electronic Materials

The structure of radiative and non-radiative recombination centres in activated CdS phosphors

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