High‐Temperature Properties of Transition Elements in Silicon

Abstract

The sections in this article are Introduction Transition Elements in Intrinsic Silicon Solubility Diffusion Solubility and Diffusion in Extrinsic Silicon Introduction Solubility Diffusion High Temperature Electronic Structure Precipitation of Transition Elements in Silicon General Considerations Chemical Driving Force Precipitate Composition Spatial Distribution of Precipitates Atomic Structure of Silicide Precipitates Precipitation without Volume Change: Nickel and Cobalt Precipitation with Volume Expansion: Copper and Palladium Heterogeneous Precipitation Iron in Silicon Copper in Silicon Nickel in Silicon Electrical Properties of Silicide Precipitates Recombination Behavior of Silicide Precipitates Spectroscopy of Deep States at Silicide Precipitates Silicide Precipitation at Si / Si O 2 Interfaces Gettering Techniques and Mechanisms Introduction to Gettering Mechanisms Internal Gettering Oxygen Precipitation Gettering p / p + Gettering External Gettering Introduction Poly‐Silicon Gettering Aluminum Gettering Cavity Gettering Phosphorus Diffusion Gettering, Segregation and Injection Gettering Summary and Outlook Acknowledgements

Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems

“…Due to the large lattice defects as well as the large specific surface of the incompact amorphous Si layer, the solubility of Cu in the Si layer could be relatively high. The amorphous Si layer acted as an ion sink and suppressed the Cu atom precipitation [22]. Therefore, differently from the so-called Cu-metal filament systems, Cu existed in the SiO x layer as ions rather than metal atoms.…”

“…In this process cations are reduced to metal atoms and then precipitate. The precipitation usually occurs when the dissolved ions are so supersaturated that reach a threshold concentration to initiate the nucleation/growth of the precipitates [22]. Due to the large lattice defects as well as large specific surface of the incompact amorphous Si layer, the solubility of Cu in the Si layer could relatively high.…”

Palladium–Hydrogen Complex in Silicon Observed by Electron Spin Resonance Measurement

“…The concentrations of Pd and hydrogen in the samples are about 10 17 cm À3 and about 10 15 -10 16 cm À3 , deduced from the solubility at 1250 C, respectively. 16,17) The ESR measurements were performed at 12 K with an X-band ( $ 8:9 GHz) spectrometer and a cylindrical microwave cavity in the TE 011 mode, using a lock-in amplifier and magnetic modulation with a frequency of 100 kHz. The sample was fixed in a quartz tube and set at the center of the cavity.…”

Electron Spin Resonance of Chromium–Platinum Pair in Silicon

“…The concentrations of Pt and Cr in the samples are about 10 17 cm À3 and about 10 15 cm À3 deduced from the solubility at 1250 C, respectively. 21,22) The ESR measurements were performed at 8 K with an Xband ( $ 8:9 GHz) spectrometer and a cylindrical microwave cavity of the TE 011 mode, using a lock-in amplifier and magnetic modulation with a frequency of 100 kHz. The samples were fixed in a quartz tube and set at the center of the cavity.…”