1993
DOI: 10.1007/bf00560010
|View full text |Cite
|
Sign up to set email alerts
|

High-temperature reaction between silicon carbide and nitrogen under pressure

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 2 publications
0
1
0
Order By: Relevance
“…However, SiC ceramics can suffer passive oxidation due to the composition of the gaseous mixture (N 2 + O 2 and H 2 O + H 2 + N 2 for the inert gas and steam generation HXs, respectively) and to the operating conditions. Equations ( 12)-( 14) show the reactions of SiC with oxygen, nitrogen and water vapor [41][42][43]. Figure 4A shows the thermal conductivity against the maximum service temperature.…”
Section: Materials Selectionmentioning
confidence: 99%
“…However, SiC ceramics can suffer passive oxidation due to the composition of the gaseous mixture (N 2 + O 2 and H 2 O + H 2 + N 2 for the inert gas and steam generation HXs, respectively) and to the operating conditions. Equations ( 12)-( 14) show the reactions of SiC with oxygen, nitrogen and water vapor [41][42][43]. Figure 4A shows the thermal conductivity against the maximum service temperature.…”
Section: Materials Selectionmentioning
confidence: 99%