High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga₂O₃/ZnO heterojunction

Abstract

Ga2O3-based photodetectors are promising for deep ultraviolet (DUV) detection owing to the relatively large bandgap (>4.5 eV) of Ga2O3. High-temperature applications, such as flame detection and aerospace have been a major challenge to the reliability of electronic devices including photodetectors. All-oxide electronic devices have great potential for applications that require high thermal stability. Therefore, we constructed an all-oxide self-powered DUV photodetector based on ϵ-Ga2O3/ZnO heterojunction and examined its ruggedness in a high-temperature environment up to 600 K. A photocurrent of up to 0.3 μA and a photo-to-dark current ratio of ∼8000 were observed at room temperature. In addition, the ϵ-Ga2O3/ZnO heterojunction remained functional even at an ambient temperature of 600 K. It was also found that sensing performance including photo-to-dark current ratio (PDCR), responsivity, detectivity, and external quantum efficiency degraded as the temperature increased. Detailed generation/recombination processes, as well as carrier transport, were explored to reveal physical insights. The thermal stability of the ϵ-Ga2O3/ZnO photodetector is thus examined, which would provide the basis for further development.

Self-Driven UVC–NIR Broadband Photodetector with High-Temperature Reliability Based on a Coco Palm-Like MoS2/GaN Heterostructure

“…Under light illumination, the temperature dependency of the carrier lifetime, or SRH lifetime (Γ ∝ T –1/2 ), decreases as temperature increases. The I ph decreases as temperature rises because it prevents carrier transport for a carrier generation rate, causing more carriers to combine before producing the I ph …”

“…The I ph decreases as temperature rises because it prevents carrier transport for a carrier generation rate, causing more carriers to combine before producing the I ph . 54 Consistent transient photoresponse (I−T) measurements were performed for repeated on/off cycles (10 s each) under the self-driven condition at a 100 μW optical power of 266, 355, 532, and 950 nm wavelength. I−T analysis indicates the stability and temperature-dependent behavior of the device after repeated cycles, proving its durability in photovoltaic mode (zero bias) at RT as well as HT conditions, as illustrated in Figure 4(a−d).…”

Self-Powered Broadband Photodetection of MoS2/Sb2Se3 Heterostructure

“…With increasing temperature, the carrier lifetime decreases since it follows a relationship of ταT −1/2 . 45 At increased temperatures, carrier mobility is impeded, even with a steady carrier generation rate. Such thermal perturbations amplify the probability of carrier recombination before their meaningful contribution to the photocurrent generation.…”

“…This reduction in the LDCR can be attributed to the influence of the charge carrier lifespan. With increasing temperature, the carrier lifetime decreases since it follows a relationship of ταT –1/2 . At increased temperatures, carrier mobility is impeded, even with a steady carrier generation rate.…”

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga2O3 Heterojunction Channels

“…The photoconductor PD is simple, but the photocurrent of PDs is limited by the mobility of the semiconductors . The photovoltaic PD is built upon the foundation of having an in-built charge separation mechanism and has a faster response time − but the detection signal cannot be amplified. In contrast, a three-terminal phototransistor with one more terminal-gate to flexibly control the carrier transport is attractive for UV PDs. − Although Ga 2 O 3 phototransistor PDs have been demonstrated previously, most of them are based on high-cost mechanical exfoliated single-crystal Cr-doped Ga 2 O 3 .…”