High temperature semiconductor sensor for the detection of fluorine

Abstract

The possibility of high measurements up to 350°C with semiconductor sensor for fluorine was silicon carbide as the substrate. temperature a chemical proven using A structure SiC/SiOz/LaF3/Pt leads to results comparable to the silicon based sensor. The influence of the temperature on the sensor behaviour is smaller than expected but the increased desorption rate improves the limit of detection. An impulse method using the initial slope of the response curve was shown to be advantageous.

Field-effect sensor for the selective detection of fluorocarbons

“…Using the SiC-based sensors it was shown that uorine can be detected in the temperature range from room temperature up to 4008C. A very small change was observed in response kinetics with variation of the working temperature [7].…”