High-temperature thermal evolution of SiAs precipitates in silicon

Parisini, A.; Nobili, D.; Armigliato, A.; Derdour, M.; Moro, L.; Solmi, S.

doi:10.1007/bf00323840

Cited by 18 publications

(5 citation statements)

References 14 publications

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“…Such a concentration exceeds already the reported solubility limit in Si (less than 2×10 21 cm -3 at 1200°C) [2]. Knowing this, it is not surprising that precipitation of a SiAs phase after high-dose implantation at high doses and SPE, and its dissolution after long time annealing has been reported [3,4,5]. Consistent with these facts we introduced in our model the precipitation of a SiAs phase for As concentration exceeding solid solubility.…”

Section: High Dose Implants: Reaching the Solid Solubility Limitssupporting

confidence: 79%

Modeling and Simulation of Advanced Annealing Processes

Martinez-Limia

Pichler

Steen

et al. 2008

MSF

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In this contribution we illustrate some important features of the development of models for the simulation of advanced annealing processes. Taking arsenic as example we discuss the challenges that the last technology trends represent for process modeling. Issues like shallow implants, high doses, low total thermal budgets, and steep temperature profiles are discussed, highlighting the physical phenomena to take into account, and how to design models that reproduce them. We also discuss with examples how important are the critical evaluation of known parameters and established approaches, and the extraction of parameters from experiments. Finally we show some applications of our model for spike and flash annealing of arsenic implants.

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Section: High Dose Implants: Reaching the Solid Solubility Limitssupporting

confidence: 79%

Modeling and Simulation of Advanced Annealing Processes

Martinez-Limia

Pichler

Steen

et al. 2008

MSF

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“…Precipitation. Precipitation and dissolution of a SiAs phase have been observed in samples imat high doses [10,15,16]. In contrast to the V As 4 clusters, the dissolution of these precipitates will not inject vacancies in to the bulk.…”

Section: As As As Asmentioning

confidence: 99%

Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation

Martinez-Limia

Pichler

Steen

et al. 2007

SSP

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We have developed a diffusion and activation model for implanted arsenic in silicon. The model includes the dynamic formation of arsenic-vacancy complexes (As4V) as well as the precipitation of a SiAs phase. The latter is mandatory to correctly describe concentrations above solid solubility while the former are needed to describe the reduced electrical activity as well as the generation of self-interstitials during deactivation. In addition, the activation state after solid-phase epitaxy and the segregation at the interface to SiO2 are taken into account. After implementation using the Alagator language in the latest version of the Sentaurus Process Simulator of Synopsys, the parameters of the model were optimized using reported series of diffusion coefficients for temperatures between 700 °C and 1200 °C, and using several SIMS profiles covering annealing processes from spike to very long times with temperatures between 700 °C and 1050 °C and a wide distribution of implantation energies and doses. The model was validated using data from flash-assisted RTP and spike annealing of ultra-low energy arsenic implants.

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“…This finding opened the way to the determination of As solubility in silicon, which was performed by the method shown in Fig. 1 at temperatures in the range 800 -1050 °C [2,3]. The dopant concentration in equilibrium with the monoclinic SiAs precipitates at the annealing temperature is evidenced by the formation of a shoulder in the chemical dopant profile.…”

Section: As Solubility Ionisation and Clusteringmentioning

confidence: 98%

“…[3], that the maximum As concentration C sat , dissolved in the Si lattice after equilibration with monoclinic SiAs, is C sat =1.3 x 10 23 exp (-0.42/kT) cm -3 (1), where kT is in eV. Only a small fraction, about 10 %, of the dissolved dopant is ionised, the limiting value n e [4,5] of the electrically active concentration being n e = 2.2 x 10 22 exp (-0.47/kT) cm -3 (2). The carrier density profile in Fig.…”

Section: As Solubility Ionisation and Clusteringmentioning

confidence: 99%

Features of arsenic clusters in silicon

Nobili

Solmi

2005

phys. stat. sol. (c)

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The solid solubility of As in silicon, the ionisation equilibria at different dopant concentrations and temperatures and the algorithms that describe these phenomena are reviewed and discussed. Experimental evidence of the occurrence of different types of clusters is presented. The correlation of clustering equilibria with As diffusivity is shown by suitable experiments. Finally we report and discuss the kinetics of As deactivation and the influence of excess point defects on the clustering process.

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High-temperature thermal evolution of SiAs precipitates in silicon

Cited by 18 publications

References 14 publications

Modeling and Simulation of Advanced Annealing Processes

Modeling and Simulation of Advanced Annealing Processes

Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation

Features of arsenic clusters in silicon

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