High-temperature thermoelectric performance of heavily doped PbSe

Parker, David; Singh, David J.

doi:10.1103/physrevb.82.035204

Cited by 256 publications

(98 citation statements)

References 22 publications

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“…p-type Si 80 Ge 20 with a maximum ZT = 0.6 at 873 K 10,11 ; nanostructured p-type Si 80 Ge 20 with enhanced ZT ∼ 0.95 around 1100K 12 ; n-type La 3−x Te 4 that can inherently be doped by controlling off-stoichiometry of the elements 13 ; the intermetallic p-type Yb 14 MnSb 11 14 which has a ZT of approximately 1 at 1200 K; and multifilled skutterudites with ZT ∼ 1.2 at 800-850 K. 15,16 PbSe, is also attractive for high-temperatures because it exhibits a monotonically increasing Seebeck coefficient even up to at least 1000 K, has a favorable electronic structure similar to that of PbTe and a lower lattice thermal conductivity at room temperature compared to PbTe. 17,18 Finally, Se is less expensive and ∼50 times more abundant than Te in the Earths crust. 19 The aforementioned attractive combination of properties has prompted us to study in detail the thermoelectric behavior of PbSe at high temperatures.…”

Section: -8mentioning

confidence: 99%

High-temperature thermoelectric properties ofn-type PbSe doped with Ga, In, and Pb

Androulakis¹,

Lee²,

Todorov

et al. 2011

Phys. Rev. B

109

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We report a systematic study of the thermoelectric properties of PbSe doped with Ga, In and excess Pb as a function of carrier density and temperature. All metal dopants efficiently generate electron carriers in the crystal lattice with densities as high as ∼ 10 20 cm −3 measured by the Hall effect. The Seebeck coefficient as a function of carrier density at room temperature was found to be similar for all dopants, while at 700K substantial differences were observed with PbSe-In exhibiting a larger response. Infra-red spectral reflectivity measurements at room temperature showed that both Ga and In substitution in PbSe weakens the curvature of the dispersion relation of the conduction band compared to Pb. This electronic effect contributes a larger density of states in transport processes at high-temperatures. We have obtained thermoelectric figures of merit of ∼ 0.9 at 900K, exceeding that of PbTe for T>800K.

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Section: -8mentioning

confidence: 99%

High-temperature thermoelectric properties ofn-type PbSe doped with Ga, In, and Pb

Androulakis¹,

Lee²,

Todorov

et al. 2011

Phys. Rev. B

109

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“…As the sister material of PbTe, PbSe has received much less attention although Se is more abundant and PbSe may offer an inexpensive alternative to PbTe especially for high temperature power generation. A recent calculation by Parker and Singh [12], predicted that heavily doped PbSe may reach 2 zT at 1000 K due to the flattening of the valence band. The experiments [13,14] later reported that the zT values could reach 1.2 and 1.3 at 850 K for heavily doped p-type and Al doped n-type PbSe, respectively.…”

Section: Introductionmentioning

confidence: 99%

Phonon conduction in PbSe, PbTe, and PbTe1−xSexfrom first-principles calculations

et al. 2012

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We apply first-principles calculations to lead selenide (PbSe) and lead telluride (PbTe) and their alloys (PbTe 1-x Se x ) which are potentially good thermoelectric materials, to investigate their phonon transport properties. By accurately reproducing the lattice thermal conductivity, we validate the approaches adopted in this work. We then compare and contrast PbSe and PbTe, evaluate the importance of the optical phonons to lattice thermal conductivity, and estimate the impacts of nanostructuring and alloying on further reducing the lattice thermal conductivity. The results indicate that: 1) the optical phonons are important not only because they directly comprise over 20% of the lattice thermal conductivity, but also because they provide strong scattering channels for acoustic phonons, which is crucial for the low thermal conductivity; 2) nanostructures of less than ~10 nm are needed to reduce the lattice thermal conductivity for pure PbSe and PbTe; 3) alloying should be a relatively effective way to reduce the lattice thermal conductivity.

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“…The high thermoelectric performance of p-type PbSe, a lower cost analog of PbTe, has been a relatively recent discovery (20)(21)(22). Originally, PbSe was thought to be significantly inferior to PbTe because of higher thermal conductivity and lower band gap (22).…”

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confidence: 99%

Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe

Wang

Pei

LaLonde

et al. 2012

Proc. Natl. Acad. Sci. U.S.A.

402

365

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PbSe is a surprisingly good thermoelectric material due, in part, to its low thermal conductivity that had been overestimated in earlier measurements. The thermoelectric figure of merit, zT, can exceed 1 at high temperatures in both p-type and n-type PbSe, similar to that found in PbTe. While the p-type lead chalcogenides (PbSe and PbTe) benefit from the high valley degeneracy (12 or more at high temperature) of the valence band, the n-type versions are limited to a valley degeneracy of 4 in the conduction band. Yet the n-type lead chalcogenides achieve a zT nearly as high as the p-type lead chalcogenides. This effect can be attributed to the weaker electron-phonon coupling (lower deformation potential coefficient) in the conduction band as compared with that in the valence band, which leads to higher mobility of electrons compared to that of holes. This study of PbSe illustrates the importance of the deformation potential coefficient of the charge-carrying band as one of several key parameters to consider for band structure engineering and the search for high performance thermoelectric materials.energy | semiconductor | quality factor W aste heat recovery using thermoelectric power generation is attracting considerable interest from the automobile industry (1) as well as from many other areas (2). Large-scale production of bulk materials with high figure of merit, zT, defined as zT ¼ S 2 σT∕ðκ e þ κ L Þ (S is the Seebeck coefficient, σ is the electric conductivity, and κ e and κ L are the electronic and lattice thermal conductivity, respectively), is the key to widespread adaption of thermoelectric technology. The search for good thermoelectric materials has focused on investigating semiconductors that have suitable band structures and low thermal conductivities (3, 4). As one of the first investigated material systems (5), PbTe and its alloys have been extensively studied and remain some of the best (6, 7) thermoelectric materials for applications from 500 to 900 K. Considerable effort has been made to achieve a higher zT in these alloys by reducing the lattice thermal conductivity, κ L , by incorporation of nanometer scale inclusions (8-11). Other strategies approach the challenge of increasing zT from different angles, such as band structure distortion by Tl doping (12), and more recently, increasing band degeneracy by converging two different valence bands in p-type PbTe (13).It can be shown that the material parameter called the thermoelectric quality factor, B,determines the optimized figure of merit (14-16) (N V is the band degeneracy, m Ã b is the density of states effective mass of a single band, μ 0 is the mobility at nondegenerate limit, and κ L is the lattice thermal conductivity). This expression is derived for semiconductors with single band transport behavior where the carrier concentration can be optimized to achieve maximum zT. For good thermoelectric semiconductors the dominant scattering mechanism at high temperatures, where zT peaks, is typically due to acoustic phonons. The deformation pote...

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High-temperature thermoelectric performance of heavily doped PbSe

Cited by 256 publications

References 22 publications

High-temperature thermoelectric properties ofn-type PbSe doped with Ga, In, and Pb

High-temperature thermoelectric properties ofn-type PbSe doped with Ga, In, and Pb

Phonon conduction in PbSe, PbTe, and PbTe1−xSexfrom first-principles calculations

Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe

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