High Thermal Conductivity Insulators for Thermal Management in 3D Integrated Circuits

Köroğlu, Çağıl; Pop, Eric

doi:10.1109/led.2023.3240676

Cited by 10 publications

(3 citation statements)

References 36 publications

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“…Heat generation impedes the performance and longevity of nearly all modern electronic devices. − This is especially true in high-density integrated circuits and power or radio-frequency (RF) electronics, , where elevated temperatures reduce transistor performance, increase leakage, and ultimately diminish device lifetimes. , A mere 5 °C increase in temperature above the optimum operating range can halve the lifetime of some devices. , Thermal management could be achieved by actively tuning heat flow and managing thermal transients, e.g. with the use of emerging thermal transistors and diodes. − Passive approaches involve simply using thin films to block or route heat away from hot spots in electronics.…”

Section: Introductionmentioning

confidence: 99%

“…Heat generation impedes the performance and longevity of nearly all modern electronic devices. 1−3 This is especially true in high-density integrated circuits 4 and power or radiofrequency (RF) electronics, 3,5 where elevated temperatures reduce transistor performance, increase leakage, and ultimately diminish device lifetimes. 6,7 A mere 5 °C increase in temperature above the optimum operating range can halve the lifetime of some devices.…”

Section: Introductionmentioning

confidence: 99%

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High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature

Perez,

McLeod,

Chen

et al. 2023

ACS Nano

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Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent thermal conductivity, but high-quality films typically require exceedingly hot deposition temperatures (>1000 °C). For thermal management applications in dense or high-power integrated circuits, it is important to deposit heat spreaders at low temperatures (<500 °C), without affecting the underlying electronics. Here, we demonstrate 100 nm to 1.7 μm thick AlN films achieved by lowtemperature (<100 °C) sputtering, correlating their thermal properties with their grain size and interfacial quality, which we analyze by X-ray diffraction, transmission X-ray microscopy, as well as Raman and Auger spectroscopy. Controlling the deposition conditions through the partial pressure of reactive N 2 , we achieve an ∼3× variation in thermal conductivity (∼36−104 W m −1 K −1 ) of ∼600 nm films, with the upper range representing one of the highest values for such film thicknesses at room temperature, especially at deposition temperatures below 100 °C. Defect densities are also estimated from the thermal conductivity measurements, providing insight into the thermal engineering of AlN that can be optimized for application-specific heat spreading or thermal confinement.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature

Perez,

McLeod,

Chen

et al. 2023

ACS Nano

Self Cite

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“…For more information, see https://creativecommons.org/licenses/by/4.0/ fan (HSF) assembly. In pure passive cooling solutions, highthermal conductivity insulators, e.g., AIN or h-BN, can be applied instead of thermally resistive interlayer dielectrics in 3-D ICs [13]. However, this modification reduces the hotspot temperature by 20% only.…”

Section: Introductionmentioning

confidence: 99%

A Novel Approach for Cooling Chiplets in Heterogeneously Integrated 2.5-D Packages Applying Microchannel Heatsink Embedded in the Interposer

Bognár

Takács

Szabó

2023

IEEE Trans. Compon., Packag. Manufact. Technol.

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AlN: An Engineered Thermal Material for 3D Integrated Circuits

Vaziri,

Perez,

Datye

et al. 2024

Adv Funct Materials

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Aluminum nitride (AlN) is a promising material for thermal management in 3D integrated circuits (ICs) due to its high thermal conductivity. However, achieving high thermal conductivity in AlN thin films grown at low temperatures on amorphous substrates poses significant challenges for back‐end‐of‐line (BEOL) compatibility. This study reports high cross‐plane thermal conductivities approaching 90 Wm−1K−1 for sub‐300 nm‐thick AlN films sputter‐deposited at low temperatures (<200 °C) on ordinary SiO2 substrates. The correlations between cross‐plane and in‐plane thermal conductivity, texture, grain size, oxygen content, Al:N atomic ratio, and thermal boundary conductance of these films are explored. These findings reveal the crucial role of grain orientation alignment in achieving high thermal conductivity and high thermal boundary conductance. A method is introduced to effectively monitor the thermal conductivity of the AlN thin films using X‐ray diffraction. This study offers valuable insights that can aid in the implementation of an effective thermal management material in the semiconductor production line.

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High Thermal Conductivity Insulators for Thermal Management in 3D Integrated Circuits

Cited by 10 publications

References 36 publications

High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature

High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature

A Novel Approach for Cooling Chiplets in Heterogeneously Integrated 2.5-D Packages Applying Microchannel Heatsink Embedded in the Interposer

AlN: An Engineered Thermal Material for 3D Integrated Circuits

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