High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si

Nie, Long-Hui; Li, X. N.; Chu, Jinn P.; Wang, Q.; Lin, Cherng‐Yuan; Chen, Dong

doi:10.1063/1.3427408

Cited by 17 publications

(8 citation statements)

References 10 publications

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“…21 The base resistivity for the Si(100) wafers was 3-4 X cm. The distribution of the elements in the films was observed by secondary ion mass spectrometry (SIMS).…”

Section: Methodsmentioning

confidence: 99%

Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

Ding

Wang

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Thin film reaction of transition metals with germanium J. Vac. Sci. Technol. A 24, 474 (2006); 10.1116/1.2191861 Correlation between outward diffusion of additives and oxidation of Cu ( 3.9 at. % Ti ) and Cu ( 2.3 at. % Ta ) thin films J. Appl. Phys. 99, 036104 (2006); 10.1063/1.2170410 Glass-forming ability and crystallization behavior of Ti-Cu-Ni-Sn-M (M=Zr, Mo, and Ta) metallic glassesTo improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu-Ni-M (M ¼ Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M ¼ Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5 lX cm for the (Ti 1.5/13.5 Ni 12/13.5 ) 0.3 Cu 99.7 film and 2.8 lX cm for the (Ta 1.1/13.1 Ni 12/13.1 ) 0.4 Cu 99.6 film after annealing at 500 C for 1 h. After annealing at 500 C for 40 h, the two films remained stable without forming a Cu 3 Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M-Ni is more negative than that of M-Cu.

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“…21 The base resistivity for the Si(100) wafers was 3-4 X cm. The distribution of the elements in the films was observed by secondary ion mass spectrometry (SIMS).…”

Section: Methodsmentioning

confidence: 99%

Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

Ding

Wang

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The resistivity of the as-deposited Cu(Re) film was found to be 6.41 µΩ•cm, higher than that of the pure Cu films (5.17 µΩ•cm) [12]. The resistivity of Cu(Re)/SiO 2 /Si stacks slightly decreased to 5.89 µΩ•cm after annealing at 350 • C. This decrease was attributed to defect annihilation and stress relief in the film during annealing [31]. Then, it increased slowly at a temperature range of 350-550 • C. According to the XRD results, highly resistant copper silicide was not detected.…”

Section: Resultsmentioning

confidence: 89%

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

et al. 2022

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The barrier properties and diffusion behavior of Cu(Re) alloy films were studied. The films were deposited onto barrierless SiO2/Si by magnetron sputtering. X-ray diffraction patterns and electric resistivity results proved that the Cu(Re) alloy films without a barrier layer were thermally stable up to 550 °C. Transmission electron microscopy images and energy-dispersive spectrometry employing scanning transmission electron microscopy provided evidence for a self-formed Re-enriched diffusion layer between the Cu(Re) alloy and SiO2/Si substrate. Furthermore, the chemical states of Re atoms at the Cu(Re)/SiO2 interface were analyzed by X-ray photoemission spectroscopy. The self-formed diffusion layer was found to be composed of Re metal, ReO and ReO3. At 650 °C, the Cu(Re) layer was completely destroyed due to atom diffusion. The low electrical resistivity in combination with the high thermal stability suggests that the Cu(Re) alloy could be the ultimate Cu interconnect diffusion barrier.

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“…Figure 3 shows the electrical resistivity changes of the Cu-Ni-Zr and Cu-Ni-Fe films with annealing temperature (for 1 h) and time (at 500 °C). The resistivities of all the annealed films are obviously lower than those of the as-deposited films, which is related to factors such as the increase of crystallinity, decrease of defects and release of stress, etc [26]. After annealing at different temperatures for 1 h, the resistivities of all films reached a minimum at 500 °C.…”

Section: Resultsmentioning

confidence: 92%

Enhanced thermal stability of Cu alloy films by strong interaction between Ni and Zr (or Fe)

Zheng¹,

Li²,

Cheng³

et al. 2018

J. Phys. D: Appl. Phys.

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Low resistivity, phase stability and nonreactivity with surrounding dielectrics are the key to the application of Cu to ultra-large-scale integrated circuits. Here, a stable solid solution cluster model was introduced to design the composition of barrierless Cu–Ni–Zr (or Fe) seed layers. The third elements Fe and Zr were dissolved into Cu via a second element Ni, which is soluble in both Cu and Zr (or Fe). The films were prepared by magnetron sputtering on the single-crystal p-Si (1 0 0) wafers. Since the diffusion characteristics of the alloying elements are different, the effects of the strong interaction between Ni and Zr (or Fe) on the film’s stability and resistivity were studied. The results showed that a proper addition of Zr–Ni (Zr/Ni ⩽ 0.6/12) into Cu could form a large negative lattice distortion, which inhibits Cu–Si interdiffusion and enhances the stability of Cu film. When Fe–Ni was co-added into Cu, the lattice distortion of Cu reached a lower value, 0.0029 Å ⩽ |Δa| ⩽ 0.0046 Å, and the films showed poor stability. Therefore, when the model is applied to the composition design of the films, the strong interaction between the elements and the addition ratio should be taken into consideration.

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High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si

Cited by 17 publications

References 10 publications

Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

Enhanced thermal stability of Cu alloy films by strong interaction between Ni and Zr (or Fe)

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