High thermoelectric efficiency fluoride perovskite materials of AgMF3 (M = Zn, Cd)

Sun, Hai‐Long; Yang, Chuan‐Lu; Yi, You‐Gen

doi:10.1016/j.mtener.2020.100611

Cited by 17 publications

(9 citation statements)

References 48 publications

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“…DP theory was used to evaluate the relaxation time, which could reveal the impact of acoustic phonon scattering on charge transport in detail. For a three-dimensional system along the β direction, the relation for the relaxation time at a temperature T , is given as follows: 42 …”

Section: Resultsmentioning

confidence: 99%

Insight into the optoelectronic and thermoelectric nature of NaLiX (X = S, Se, Te) novel direct bandgap semiconductors: a first-principles study

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Insight into the optoelectronic and thermoelectric nature of NaLiX (X = S, Se, Te) novel direct bandgap semiconductors: a first-principles study

et al. 2022

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“…Greaves and his group have estimated the Poisson ratio (v) of the Polymers to be approximately .33 [24] which reflects that the studied materials reveal themselves as polymers. The melting temperature (T m ) which pronounces the thermal and elastic performance of the materials has been computed using the following equation [25]:…”

Section: Mechanical and Dynamic Stabilitymentioning

confidence: 99%

DFT study of structural, mechanical, thermodynamic, electronic, and thermoelectric properties of new PdTiZ (Z = Ge and Pb) half Heusler compounds

Kalita

Limbu

Ram

et al. 2022

Int J of Quantum Chemistry

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A first principle investigation of structural, mechanical, thermodynamical, electronic, and thermoelectric properties of PdTiZ (Z = Ge and Pb) were carried out using the plane‐wave pseudopotential (PP‐PW) method. The exchange‐correlation between the electrons was considered with the generalized gradient approximation of Perdew‐Burke‐Ernzerhof (PBE‐GGA). The energy band structure of the sample materials shows that it is a semiconductor with indirect energy band gaps of 0.66 eV and 0.387 eV in PdTiGe and PdTiPb, respectively, with the density of states being mainly dominated by the p states of Z and d states of Ti atom in the vicinity of the Fermi energy level. The sample compounds were found to be mechanically and dynamically stable in their non‐magnetic cubic phase. PdTiGe was found to be harder and stiffer than PdTiPb. The thermodynamic study revealed that pressure has a negative effect on heat capacity, whereas Debye temperature increases with enhanced pressure in both the sample compounds. The thermoelectric properties of the sample compounds predicted that p‐type nature of the sample compounds possess better thermoelectric performance. The room temperature Seebeck coefficient (S) values were found to be 98.73 μV/K and 94.82 μV/K for PdTiGe and PdTiPb, respectively, whereas S values of 245.73 μV/K and 218.77 μV/K at 1200 K at n = 1021 cm−3. The lowest values of lattice thermal conductivity (KL) of 2.28 W/m‐K and .98 W/m‐K were observed for PdTiGe and PdTiPb, respectively. The optimum dimensionless figure of merits of .66 (1200 K) and .64 (1000 K) were found for p‐type PdTiGe and PdTiPb, respectively, at optimum carrier concentration.

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“…From a materials perspective, the performance of the thermoelectric can be altered using various methods due to the different components contributing to a single parameter. For instance, thermal conductivity comprises lattice (κ lat ), bipolar (κ bi ), and electrical (κ ele ) components [12][13][14][15][16][17][18][19][20][21]. Much of the work in decreasing thermal conductivity is aimed towards κ lat , utilizing strategies such as downscaling and isovalent substitution, which hinder the transport of heat-carrying acoustic phonons [22][23][24][25][26][27][28][29][30][31][32][33][34].…”

Section: Thermoelectric Devicesmentioning

confidence: 99%

“…More recently, machine learning has been popularly used in conjunction with materials science discovery and air materials development [35][36][37][38]. However, the effectiveness of these strategies is limited according to the defect type and the wavelengths of phonons [18,[38][39][40][41][42]. Alternatively, other strategies, such as band structure modulation, entropy engineering, and preferential scattering of minority carriers, can be explored, which aim to improve other components of thermal conductivity as well [43][44][45][46][47][48][49][50][51][52][53].…”

Section: Thermoelectric Devicesmentioning

confidence: 99%

Potential of Recycled Silicon and Silicon-Based Thermoelectrics for Power Generation

et al. 2022

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Thermoelectrics can convert waste heat to electricity and vice versa. The energy conversion efficiency depends on materials figure of merit, zT, and Carnot efficiency. Due to the higher Carnot efficiency at a higher temperature gradient, high-temperature thermoelectrics are attractive for waste heat recycling. Among high-temperature thermoelectrics, silicon-based compounds are attractive due to the confluence of light weight, high abundance, and low cost. Adding to their attractiveness is the generally defect-tolerant nature of thermoelectrics. This makes them a suitable target application for recycled silicon waste from electronic (e-waste) and solar cell waste. In this review, we summarize the usage of high-temperature thermoelectric generators (TEGs) in applications such as commercial aviation and space voyages. Special emphasis is placed on silicon-based compounds, which include some recent works on recycled silicon and their thermoelectric properties. Besides materials design, device designing considerations to further maximize the energy conversion efficiencies are also discussed. The insights derived from this review can be used to guide sustainable recycling of e-waste into thermoelectrics for power harvesting.

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High thermoelectric efficiency fluoride perovskite materials of AgMF3 (M = Zn, Cd)

Cited by 17 publications

References 48 publications

Insight into the optoelectronic and thermoelectric nature of NaLiX (X = S, Se, Te) novel direct bandgap semiconductors: a first-principles study

Insight into the optoelectronic and thermoelectric nature of NaLiX (X = S, Se, Te) novel direct bandgap semiconductors: a first-principles study

DFT study of structural, mechanical, thermodynamic, electronic, and thermoelectric properties of new PdTiZ (Z = Ge and Pb) half Heusler compounds

Potential of Recycled Silicon and Silicon-Based Thermoelectrics for Power Generation

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