2023
DOI: 10.1039/d3tc02169f
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High thermoelectric figure of merit in p-type Mg3Si2Te6: role of multi-valley bands and high anharmonicity

Abstract: Materials with high thermoelectric efficiency along with industrial compatibility are of great commercial and technological interest. Since silicon is a most widely used material in electronic industry, several approaches have...

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Cited by 1 publication
(2 citation statements)
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“…As a consequence, the compound exhibits a low lattice thermal conductivity and excellent electronic transport properties. Specifically, the p-type Mg3Si2Te6 material achieves a zT greater than 1 at temperatures above 600 K. Along the cross-plane direction, it reaches a zT value of 2.0 at 900 K. These findings provide valuable insights for the design of silicon-based thermoelectric materials …”
Section: Methods Of Synthesismentioning
confidence: 99%
See 1 more Smart Citation
“…As a consequence, the compound exhibits a low lattice thermal conductivity and excellent electronic transport properties. Specifically, the p-type Mg3Si2Te6 material achieves a zT greater than 1 at temperatures above 600 K. Along the cross-plane direction, it reaches a zT value of 2.0 at 900 K. These findings provide valuable insights for the design of silicon-based thermoelectric materials …”
Section: Methods Of Synthesismentioning
confidence: 99%
“…Specifically, the ptype Mg3Si2Te6 material achieves a zT greater than 1 at temperatures above 600 K. Along the cross-plane direction, it reaches a zT value of 2.0 at 900 K. These findings provide valuable insights for the design of silicon-based thermoelectric materials. 109 3.6. Thermoelectric Materials Doped with n-Type Impurities.…”
Section: Thermoelectric Materials Doped With P-type Impuritiesmentioning
confidence: 99%