Thermoelectric properties of CoSb 3 -based skutterudites are greatly determined by the removal of detrimental impurities, such as (Fe/Co)Sb 2 , (Fe/Co)Sb, and Sb. In this study, we use a facile temperature gradient zone melting (TGZM) method to synthesize high-performance CoSb 3 -based skutterudites by impurity removal. After removing metallic or semimetallic impurities (Fe/Co)Sb, (Fe/Co)Sb 2 , and Sb, the carrier concentration of TGZM-Ce 0.75 Fe 3 CoSb 12 can be reduced to 1.21 × 10 20 cm −3 and the electronic thermal conductivity dramatically reduced to 0.7 W m −1 K −1 at 693 K. Additionally, removing these impurities also effectively reduces the lattice thermal conductivity from 7.2 W m −1 K −1 of cast-Ce 0.75 Fe 3 CoSb 12 to 1.02 W m −1 K −1 of TGZM-Ce 0.75 Fe 3 CoSb 12 at 693 K. As a consequence, TGZM-Ce 0.75 Fe 3 CoSb 12 approaches a high power factor of 11.7 μW cm −1 K −2 and low thermal conductivity of 1.72 W m −1 K −1 at 693 K, leading to a peak zT of 0.48 at 693 K, which is 10 times higher than that of cast-Ce 0.75 Fe 3 CoSb 12 . This study indicates that our facile TGZM method can effectively synthesize high-performance CoSb 3 -based skutterudites by impurity removal and set up a solid foundation for further development.