High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures

Cha, Jieun; Zhou, Chongjian; Lee, Yong Kyu; Cho, Sung‐Pyo; Chung, In Jae

doi:10.1021/acsami.9b08108

Cited by 49 publications

(29 citation statements)

References 57 publications

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“…A summary of ZTs for SnSe‐based thermoelectric materials. a) The timeline for state‐of‐the‐art SnSe bulks thermoelectric materials,11–124,169–182 the performance achieved by solution route are circled by yellow. b) Temperature‐dependent ZT and c) corresponding peak and average ZT values for polycrystalline SnSe through different fabrication techniques 13,16,22,46,58,62,95,99,101.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

2020

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Tin selenide (SnSe) is one of the most promising candidates to realize environmentally friendly, cost‐effective, and high‐performance thermoelectrics, derived from its outstanding electrical transport properties by appropriate bandgaps and intrinsic low lattice thermal conductivity from its anharmonic layered structure. Advanced aqueous synthesis possesses various unique advantages including convenient morphology control, exceptional high doping solubility, and distinctive vacancy engineering. Considering that there is an urgent demand for a comprehensive survey on the aqueous synthesis technique applied to thermoelectric SnSe, herein, a thorough overview of aqueous synthesis, characterization, and thermoelectric performance in SnSe is provided. New insights into the aqueous synthesis‐based strategies for improving the performance are provided, including vacancy synergy, crystallization design, solubility breakthrough, and local lattice imperfection engineering, and an attempt to build the inherent links between the aqueous synthesis‐induced structural characteristics and the excellent thermoelectric performance is presented. Furthermore, the significant advantages and potentials of an aqueous synthesis route for fabricating SnSe‐based 2D thermoelectric generators, including nanorods, nanobelts, and nanosheets, are also discussed. Finally, the controversy, strategy, and outlook toward future enhancement of SnSe‐based thermoelectric materials are also provided. This Review guides the design of thermoelectric SnSe with high performance and provides new perspectives as a reference for other thermoelectric systems.

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Section: Introductionmentioning

confidence: 99%

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

2020

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“…However, extensive control of the carrier concentration in SnSe is difficult due to thermodynamic solubility restriction of doping elements. Another important purpose of doping in SnSe is to realize n-type SnSe, and doping (co-doping) of Br, 11 I, 12 Bi, 13 Cl, and PbSe, 14 BiCl 3 , 15 and Ti and Pb 16 has been investigated. ZT = 2.2 at 600 K for n-type Bi-doped SnSe 13 and ZT = 2.8 at 900 K for n-type Br-doped SnSe 11 have been reported.…”

Section: ■ Introductionmentioning

confidence: 99%

Thermoelectric Property of n-Type Bismuth-Doped SnSe Film: Influence of Characteristic Film Defect

Horide

Nakamura

Hirayama

et al. 2021

ACS Appl. Energy Mater.

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Highly aligned SnSe exhibits very high thermoelectric properties, and orientation control in films is very promising for developing high-performance thermoelectric modules. While SnSe films with intrinsic p-type nature have been reported, fabrication of the highly aligned n-type SnSe films is difficult due to thermodynamic restriction on the solubility of the doping elements. Here, highly oriented SnSe films doped with Bi were successfully fabricated using pulsed laser deposition. Characteristic film structures were observed: doped Bi in the SnSe matrix; domain boundaries with a spacing of ∼200 nm; self-organized Bi precipitates with a bimodal size distribution; and stacking faults. The most important result is observation of the n-type Hall resistivity and the n-type Seebeck coefficient. The stacking faults and the doped Bi in the films degraded the room-temperature Seebeck coefficient. While the electron carrier mobility in room temperature was smaller than that in the single crystal due to the domain boundary scattering, the domain boundary scattering was suppressed in the high temperature of 300 °C. Thus, the characteristic film structures significantly affect the thermoelectric properties of SnSe. The doped Bi in the SnSe matrix, the stacking faults, and the domain boundaries should be controlled for further improvement of the thermoelectric properties in the Bi-SnSe films, and the self-organized Bi nanoprecipitates are very promising for achieving high-performance Bi-SnSe with decreased thermal conductivity.

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“…The dominant MFPs of phonons are typically an order of magnitude larger than those of electrons, thus phonon transport suffers more in the presence of nanostructuring. Some of the best results in terms of ZT improvements, however, were achieved in cases where care was taken to avoid power factor reduction [4,17,[36][37][38][39][40][41][42][43]. This is commonly achieved in two ways, either by: (i) aligning the band edges of the nanoinclusions with those of the pristine material to keep the electronic conductivity high, or (ii) going towards the reverse direction, by introducing energy barriers that result in energy filtering and improve the Seebeck coefficient.…”

Section: Introductionmentioning

confidence: 99%

Hierarchically nanostructured thermoelectric materials: challenges and opportunities for improved power factors

et al. 2020

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The field of thermoelectric materials has undergone a revolutionary transformation over the last couple of decades as a result of the ability to nanostructure and synthesize myriads of materials and their alloys. The ZT figure of merit, which quantifies the performance of a thermoelectric material has more than doubled after decades of inactivity, reaching values larger than two, consistently across materials and temperatures. Central to this ZT improvement is the drastic reduction in the material thermal conductivity due to the scattering of phonons on the numerous interfaces, boundaries, dislocations, point defects, phases, etc., which are purposely included. In these new generation of nanostructured materials, phonon scattering centers of different sizes and geometrical configurations (atomic, nano- and macro-scale) are formed, which are able to scatter phonons of mean-free-paths across the spectrum. Beyond thermal conductivity reductions, ideas are beginning to emerge on how to use similar hierarchical nanostructuring to achieve power factor improvements. Ways that relax the adverse interdependence of the electrical conductivity and Seebeck coefficient are targeted, which allows power factor improvements. For this, elegant designs are required, that utilize for instance non-uniformities in the underlying nanostructured geometry, non-uniformities in the dopant distribution, or potential barriers that form at boundaries between materials. A few recent reports, both theoretical and experimental, indicate that extremely high power factor values can be achieved, even for the same geometries that also provide ultra-low thermal conductivities. Despite the experimental complications that can arise in having the required control in nanostructure realization, in this colloquium, we aim to demonstrate, mostly theoretically, that it is a very promising path worth exploring. We review the most promising recent developments for nanostructures that target power factor improvements and present a series of design ‘ingredients’ necessary to reach high power factors. Finally, we emphasize the importance of theory and transport simulations for materialoptimization, and elaborate on the insight one can obtain from computational tools routinely used in the electronic device communities. Graphical abstract

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High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures

Cited by 49 publications

References 57 publications

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

Thermoelectric Property of n-Type Bismuth-Doped SnSe Film: Influence of Characteristic Film Defect

Hierarchically nanostructured thermoelectric materials: challenges and opportunities for improved power factors

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