High thermoelectric performance of melt-spun CuxBi0.5Sb1.5Te3 by synergetic effect of carrier tuning and phonon engineering

Yoon, Jeong Seop; Song, Jae Min; Rahman, Jamil Ur; Lee, Soonil; Seo, Won Seon; Lee, Kyu Hyoung; Kim, Se-Yun; Kim, Hyun Sik; Kim, Sang il; Shin, Weon Ho

doi:10.1016/j.actamat.2018.07.067

Cited by 42 publications

(21 citation statements)

References 32 publications

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“…Nevertheless, several studies have recently reported experimental results for this family of materials prepared by MS that are in better agreement with our results [17,[21][22][23][24][39][40][41].…”

Section: Transport Propertiessupporting

confidence: 93%

“…These studies followed pioneering works performed in the 1980s and 1990s on the binaries Bi2Te3, Sb2Te3 and Bi2Se3 prepared by MS [12][13][14][15][16]. Even if these remarkable values have been tempered recently with ZT values close to 1.1 -1.2 [17][18][19][20][21][22][23][24], all the studies showed that MS is a worthwhile mean for further optimizing the thermoelectric performances of Sb2Te3…”

Section: Introductionmentioning

confidence: 99%

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Structural and transport properties of quenched and melt-spun BixSb2−xTe3 solid solutions (x = 0.40 and 0.48)

et al. 2019

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We report on a detailed investigation of the structural and transport properties of BixSb2-xTe3 (x = 0.40 and 0.48) samples, prepared by either water quenching or melt-spinning (MS) and consolidated by spark plasma sintering (SPS), by means of X-ray diffraction, scanning and transmission electron microscopy, and transport property measurements (5-480 K). All the samples crystallize in the rhombohedral structure type of Bi2Te3. While the samples prepared by water quenching exhibit some segregations of the elements over the micron length scale, the MS samples are highly homogeneous. Unlike prior reports where an increase in the 2 dimensionless thermoelectric figure of merit ZT has been observed in MS samples, we find that both series of samples show similar peak ZT values. Owing to slight variations in the hole concentration, the maximum ZT is shifted closer to room temperature in MS samples with a peak ZT of 1.1 achieved at 340 K for x = 0.48. Our results highlight the extreme sensitivity of the ZT values to the Bi content and, for a given chemical composition, to slight variations in the hole concentration and microstructure. We further demonstrate the good reproducibility of the MS technique indicating that this method enables controlling the defect concentration inherent to these materials.

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Section: Transport Propertiessupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Structural and transport properties of quenched and melt-spun BixSb2−xTe3 solid solutions (x = 0.40 and 0.48)

et al. 2019

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“…In order to better clarify the effect of Mn doping on the electrical properties, Pisarenko lines and the carrier concentration dependence of the Seebeck coefficient are plotted as shown in Figure d according to the following equation based on the simple parabolic band dispersion and relaxation time approximation for a degenerate semiconductor , where the k B , e , h , and n are the Boltzmann constant, elemental charge, Planck constant, and carrier concentration, respectively. As can be seen from Figure d, with increasing Mn content, the effective mass m * is increased with carrier concentration.…”

Section: Resultsmentioning

confidence: 99%

Achieving a High Average zT Value in Sb₂Te₃-Based Segmented Thermoelectric Materials

Qin

Zhu

Cui

et al. 2019

ACS Appl. Mater. Interfaces

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A tiny amount of Mn is doped in In0.15Sb1.85Te3 sample to tailor its carrier concentration, thus boosting the power factor and suppressing the bipolar effect. Furthermore, large amounts of nanotwins are constructed to effectively scatter the phonons and reduce the lattice thermal conductivity. As a result, the zT value of Mn0.02In0.15Sb1.83Te3 is enhanced up to 1.0 at 673 K, making this material a robust candidate for medium-temperature (500–673 K) thermoelectric applications. Then combining with the low-temperature thermoelectric material Mn0.0075Bi0.5Sb1.4925Te3 previously reported by our group and using nickel as a barrier layer, a high average zT value of 1.08 during a broad temperature range from 303 to 673 K together with an Ohmic contact interface bonding is achieved in the p-type segmented leg fabricated via simple one-step sintering. Finally, the maximum theoretical conversion efficiency with a temperature difference of 370 K reaches ∼12.7%.

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“…The m* could be evaluated using the single parabolic band (SPB) approximation. 39,40 Figure 4d illustrates the difference in the DOS effective mass between pure BST and BST−x wt % ST composites. It is found that the m* values of the composites slightly deviated from the SPB model of pure BST.…”

Section: Scheme 1 Flowchart Of the Bst−x Wt % St Composites Preparationmentioning

confidence: 99%

Enhanced Thermoelectric Properties of p-Type Bi_0.48Sb_1.52Te₃/Sb₂Te₃ Composite

Shi

Tan

Wang

et al. 2020

ACS Appl. Mater. Interfaces

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Constructing a nanocomposite to introduce a coherent interface is an effective way to improve the property of thermoelectric material. Here, a series composites of Bi 0.48 Sb 1.52 Te 3 −x wt % Sb 2 Te 3 (x = 0, 0.3, 0.5, 0.8, and 1.0) were synthesized, where the hydrothermally prepared Sb 2 Te 3 nanosheets were intimately wrapped in the solid-state-reacted Bi 0.48 Sb 1.52 Te 3 matrix. The formation of a coherent interface was observed and confirmed by the scanning electron microscopy characterization. As the Sb 2 Te 3 content was over 0.5 wt %, the carrier mobility could increase by 26%, while the carrier concentration decreased by 9% compared to those of the pure matrix at 300 K, enhancing the power factor to 40.1 μW/cm K 2 . Moreover, the Bi 0.48 Sb 1.52 Te 3 −0.5 wt % Sb 2 Te 3 sample exhibited a reduced lattice thermal conductivity of 0.83 W/m K at room temperature, resulting from the strengthened phonon scattering by interfaces. Combined with the manipulations of both the electronic and thermal transport by constructing a coherent interface, a maximum ZT of 1.05 was obtained in the x = 0.5 composite at 300 K, and it was improved by 20% compared with the result of the Bi 0.48 Sb 1.52 Te 3 matrix.

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High thermoelectric performance of melt-spun CuxBi0.5Sb1.5Te3 by synergetic effect of carrier tuning and phonon engineering

Cited by 42 publications

References 32 publications

Structural and transport properties of quenched and melt-spun BixSb2−xTe3 solid solutions (x = 0.40 and 0.48)

Structural and transport properties of quenched and melt-spun BixSb2−xTe3 solid solutions (x = 0.40 and 0.48)

Achieving a High Average zT Value in Sb₂Te₃-Based Segmented Thermoelectric Materials

Enhanced Thermoelectric Properties of p-Type Bi_0.48Sb_1.52Te₃/Sb₂Te₃ Composite

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High thermoelectric performance of melt-spun CuxBi0.5Sb1.5Te3 by synergetic effect of carrier tuning and phonon engineering

Cited by 42 publications

References 32 publications

Structural and transport properties of quenched and melt-spun BixSb2−xTe3 solid solutions (x = 0.40 and 0.48)

Structural and transport properties of quenched and melt-spun BixSb2−xTe3 solid solutions (x = 0.40 and 0.48)

Achieving a High Average zT Value in Sb2Te3-Based Segmented Thermoelectric Materials

Enhanced Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3/Sb2Te3 Composite

Contact Info

Product

Resources

About

Achieving a High Average zT Value in Sb₂Te₃-Based Segmented Thermoelectric Materials

Enhanced Thermoelectric Properties of p-Type Bi_0.48Sb_1.52Te₃/Sb₂Te₃ Composite