High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

Shao, Yaoming; Zheng, Pingping; Dong, Tianhao; Wei, Lianghuan; Wu, Haifei; Si, Jianxiao

doi:10.1016/j.vacuum.2023.112791

Vacuum

2024

DOI: 10.1016/j.vacuum.2023.112791

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High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

Yaoming Shao,

Pingping Zheng,

Tianhao Dong

et al.

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Cited by 4 publications

References 28 publications

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High‐Performing Flexible Mg₃Bi₂ Thin‐Film Thermoelectrics

Hu,

Shi,

Cao

et al. 2024

Advanced Science

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With the advances in bulk Mg3Bi2, there is increasing interest in pursuing whether Mg3Bi2 can be fabricated into flexible thin films for wearable electronics to expand the practical applications. However, the development of fabrication processes for flexible Mg3Bi2 thin films and the effective enhancement of their thermoelectric performance remain underexplored. Here, magnetron sputtering and ex‐situ annealing techniques is used to fabricate flexible Mg3Bi2 thermoelectric thin films with a power factor of up to 1.59 µW cm−1 K−2 at 60 °C, ranking as the top value among all reported n‐type Mg3Bi2 thin films. Extensive characterizations show that ex‐situ annealing, and optimized sputtering processes allow precise control over film thickness. These techniques ensure high adhesion of the films to various substrates, resulting in excellent flexibility, with <10% performance degradation after 500 bending cycles with a radius of 5 mm. Furthermore, for the first time, flexible thermoelectric devices are fabricated with both p‐type and n‐type Mg3Bi2 legs, which achieve an output power of 0.17 nW and a power density of 1.67 µW cm−2 at a very low temperature difference of 2.5 °C, highlighting the practical application potential of the device.

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High‐Performing Flexible Mg₃Bi₂ Thin‐Film Thermoelectrics

Hu,

Shi,

Cao

et al. 2024

Advanced Science

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Mg3(Sb,Bi)2-based materials and devices rivaling bismuth telluride for thermoelectric power generation and cooling

Bano,

Chetty,

Babu

et al. 2024

Device

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Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying

Ran,

Ma,

et al. 2024

Journal of Alloys and Compounds

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High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

Cited by 4 publications

References 28 publications

High‐Performing Flexible Mg₃Bi₂ Thin‐Film Thermoelectrics

High‐Performing Flexible Mg₃Bi₂ Thin‐Film Thermoelectrics

Mg3(Sb,Bi)2-based materials and devices rivaling bismuth telluride for thermoelectric power generation and cooling

Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying

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About

High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

Cited by 4 publications

References 28 publications

High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics

High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics

Mg3(Sb,Bi)2-based materials and devices rivaling bismuth telluride for thermoelectric power generation and cooling

Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying

Contact Info

Product

Resources

About

High‐Performing Flexible Mg₃Bi₂ Thin‐Film Thermoelectrics

High‐Performing Flexible Mg₃Bi₂ Thin‐Film Thermoelectrics