High throughput defect detection with multiple parallel electron beams

Abstract

Electron and ion optical design software for integrated circuit manufacturing equipment A new concept for high throughput defect detection with multiple parallel electron beams is described. As many as 30 000 beams can be placed on a footprint of a in. 2 , each beam having its own microcolumn and detection system without cross-talk. Based on the International Technology Roadmap for Semiconductors requirements, some high level properties of the implementation of this concept were derived. A projection lens was designed that can both focus the primary beam into a small spot and simultaneously collect 75% of the secondary electrons. Conceptual design studies were performed for three crucial components of the detector chain: the scintillator, the light optics, and the detection array. The throughput of this concept is expected to be at least a factor of 300 higher than standard electron beam based defect detection systems.

Smart E-Beam for Defect Identification & Analysis in the Nanoscale Technology Nodes: Technical Perspectives

“…If there are no defects, the result of the subtraction of Image (2) from Image (1) by digital processing will be zero and no defects are detected. In contrast, if there is a defect in the image of die (2), the defect will remain in the subtracted image (3), as shown in the figure. The defect is then detected and its position coordinates are registered.…”

“…Raplee et al [2] presented robust process systems that can detect imperfections and improve desirable repeatability using in situ monitoring, such as thermographic imaging. Van Himbergen et al [3] described the concept for high throughput faithfully serve to answer the most basic questions concerning every possible aspect of EBI, besides helping to pave the future road-map of semiconductor inspection trade.…”

Optical system for a multiple-beam scanning electron microscope

“…[10][11][12][13] More specifically, detecting signals separately is an inherent challenge in regard to multiple-beam SEM. In this study, this challenge was addressed by designing an electron optical system with an additional part for controlling multiple secondary-electron signals independently of beam illumination.…”

Holographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanks

“…The balance between defect size, or more appropriately, size of the feature in the resist on the one hand, and resolving capabilities of the surface analysis technique on the other, is an important aspect in assessing the sensitivity, and consequently, speed of the inspection method. This aspect of throughput, determined by signal-to-noise, defect size and resolution, has been addressed in a previous publication 14 . In that paper, a novel wafer inspection technique using multiple low resolution electron beams is described.…”