High-throughput electron-beam lithography with a raster-scanned, variably shaped beam

Veneklasen, Lee H.; Kao, H.; Rishton, S. A.; Winter, S.; Boegli, Volker; Newman, Thomas H.; Bertuccelli, G.; Howard, G.; Le, Phuong; Tan, Zoilo C. H.; Lozes, Richard L.

doi:10.1116/1.1414117

Cited by 4 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The exposure for mask writing used MEBES Quadra™ RSB (Raster Shaped Beam) 50KeV systems. (6)(7)(8) Post-exposure bake is performed on a SigmaMeltec bake station at 75-90ºC. PEB is necessary to drive the acidcatalyzed reaction creating a differential solubility in the exposed areas.…”

Section: Methodsmentioning

confidence: 99%

Comparative study of two negative CAR resists: EN-024M and NEB 31

et al. 2004

View full text Add to dashboard Cite

In this paper, two negative-tone chemically amplified resists (CAR) are evaluated. The methodology and results are compared and discussed. The resists include EN-024M from TOK, and NEB 31 from Sumitomo. Both resists show high contrast, good dry etch selectivity, and high environmental stability. EN-024M showed good coating uniformity while NEB31 showed a coating uniformity problem. This was a round "dimple" approximately one centimeter in diameter of different thickness and density at the center of the plate. We addressed the "dimple" coating problem as described in the paper. Optimum PAB and PEB temperatures and nominal to maximum doses for isolated features were determined by running a matrix of PAB and PEB temperatures along with a dose series. We evaluated the process and compared the lithographic performance in terms of dose sensitivity, dose and bake latitude, resolution, resist profile, OPC (Optical Proximity Correction) pattern fidelity, CD uniformity, environmental stability, Line Edge Roughness (LER) and etching bias and resistance.

show abstract

Section: Methodsmentioning

confidence: 99%

Comparative study of two negative CAR resists: EN-024M and NEB 31

et al. 2004

View full text Add to dashboard Cite

show abstract

Writing strategy and electron-beam system with an arbitrarily shaped beam

Babin

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inFacile fabrication of high-resolution extreme ultraviolet interference lithography grating masks using footing strategy during electron beam writing J. Vac. Sci. Technol. B 31, 06F602 (2013); 10.1116/1.4822016Variable cell projection as an advance in electron-beam cell projection system Development of an electron-beam lithography system for high accuracy masks Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam systemThe greatly increased complexity of modern masks has in turn led to increased write times and cost of the masks. Any opportunity to decrease write time while providing the required accuracy of the fabricated pattern is highly beneficial. A writing strategy using an arbitrarily shaped beam (ASB) results in a considerably smaller number of flashes to write a complex pattern compared to other strategies. The design of an ASB system is proposed. The ASB electron-beam column is similar to that of a variable-shaped beam system, except for a modified beam-shaping block. This suggests the relatively easy integration of an ASB column. The throughput of an ASB system is higher than the throughput of other systems, except for patterns with low coverage or simple geometries. In addition to the throughput advantages, an ASB system enables higher accuracy, including the feasibility of writing features according to "ideal" optical proximity correction.

show abstract

Mask Writers

Babin¹

2005

Handbook of Photomask Manufacturing Technology

View full text Add to dashboard Cite

High-throughput electron-beam lithography with a raster-scanned, variably shaped beam

Cited by 4 publications

References 6 publications

Comparative study of two negative CAR resists: EN-024M and NEB 31

Comparative study of two negative CAR resists: EN-024M and NEB 31

Writing strategy and electron-beam system with an arbitrarily shaped beam

Mask Writers

Contact Info

Product

Resources

About