High total ionizing dose and temperature effects on micro- and nano-electronic devices

Gaillardin, M.; Martinez, M.; Girard, Sylvain; Goiffon, V.; Paillet, Philippe; Leray, J.L; Magnan, P.; Ouerdane, Y.; Boukenter, Aziz; Marcandella, Claude; Duhamel, O.; Raine, M.; Richard, Nicolas; Andrieu, F.; Barraud, S.; Faynot, O.

doi:10.1109/animma.2013.6728068

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…Measurements on realistic test vehicles are now under way focusing on two techniques: ion implantation and UHV/CVD layer growth. A CMOS compatible process with a SiGe add on fabrication step will be a successful outcome of this R&D. One subsequent step will be to assure the radiation hardening of the process but this seems to our reach for the present-day technological nodes [6] [12][13].…”

Section: Discussionmentioning

confidence: 99%

The TRAMOS pixel as a photo-detection device: Design, architecture and building blocks

Fourches

Kumar

Serruys

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The nchannel device is based on holes in-buried gate localization. Source-drain current modulation occurs, measurable during readout. The buried gate (Deep Trapping Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed. 1 Corresponding Author. Nicolas Fourches: Tel.: +33(0)164463616; fax: +33(0)164463616: nicolas.fourches@cea.fr TRAMOS pixel operation principle and background Introduction: general concept and backgroundIn 2010 the deep trapping gate device concept (or TRAMOS: TRApping MOS) for charged particle detection was introduced by Saclay/IRFU [1]. It is based on an n-MOS structure in which a buried gate is located below the n-channel. Particles that generate electron-hole pairs by depositing energy in the volume located below the channel can be detected in the following way. Generated holes drift towards the channel and become localized in the buried gate. The subsequent change in the buried gate charge state leads to a modulation of the source-drain current. This new buried gate contains localized deep level centers (Deep Trapping Gate or DTG) which can be introduced during process, or alternatively a SiGe quantum well (Valence Band Well) can be used. The buried gate is then effective in localizing charge carriers during an amount of time sufficiently long to ensure adequate pixel readout (Fig.1) The point to point resolution of such a device, reduced to one single transistor (1μm 2 ), follows the down-scaling rules of standard CMOS processes. This low area sets the resolution below 1 μm which is a significant improvement with respect to DEPFET [2] and CMOS pixels. The TRAMOS proof of principle was verified using (TCAD) 2D device and process simulations [3]. Because it is depleted during detection the TRAMOS is potentially harder with respect to bulk damage than previous CMOS pixels. The pixel proof of design, using existing fabrications technique will be presented here. The use of this pixel for photons detection and imaging both of low and high energy is also possible. These pixel-arrays are primarily intended to be used in the inner-detectors for vertex determination in high energy physics experiments. We will focus on the technological steps that are necessary to fabricate the elementary pixel. Technological optionsTher...

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Section: Discussionmentioning

confidence: 99%

The TRAMOS pixel as a photo-detection device: Design, architecture and building blocks

Fourches

Kumar

Serruys

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers

Girard

Marcandella

Morana

et al. 2013

IEEE Trans. Nucl. Sci.

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International audienceWe investigate the response of Ge-doped, P-doped, pure-silica, or Fluorine-doped fibers to extreme environments combining doses up to MGy(SiO $_{{{2}}}$) level of 10 keV X-rays and temperatures between 25 C and 300 C . First, we evaluate their potential to serve either as parts of radiation tolerant optical or optoelectronic systems or at the opposite, for the most sensitive ones, as punctual or distributed dosimeters. Second, we improve our knowledge on combined ionizing radiations and temperature (R&T) effects on radiation-induced attenuation (RIA) by measuring the RIA spectra in the ultraviolet and visible domains varying the R&T conditions. Our results reveal the complex response of the tested fibers in such mixed environments. Increasing the temperature of irradiation increases or decreases the RIA values measured at 25C or sometimes has no impact at all. Furthermore, R&T effects are time dependent giving an impact of the temperature on RIA that evolves with the time of irradiation. The two observed transient and stationary regimes of temperature influence will make it very difficult to evaluate sensor vulnerability or the efficiency of hardening approaches without extensive test campaign

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A Characterization Method for TID Versus Temperature Effects on Microelectronic Circuits

Rizzo,

Muschitiello,

Gupta

et al. 2024

IEEE Trans. Nucl. Sci.

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High total ionizing dose and temperature effects on micro- and nano-electronic devices

Cited by 3 publications

References 20 publications

The TRAMOS pixel as a photo-detection device: Design, architecture and building blocks

The TRAMOS pixel as a photo-detection device: Design, architecture and building blocks

Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers

A Characterization Method for TID Versus Temperature Effects on Microelectronic Circuits

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