High transmittance and low resistive ZnO:Al films for thin film solar cells

Effect of preparation condition on the optical properties of transparent conducting oxide based on zinc oxide

“…30, 40 and 50 psi) at room temperature. The transmittance spectra showed that the transmittance decreased with increasing the pressure of the gas as seen in Fig.9 which is in consistence with results of the literature [36][37][38] The five thin films of Al 2 ZnO 4 of the same thickness 300 nm were deposited under the same rate of gas flow 30 sccm and each film was prepared under certain argon pressure (5, 10, 20. 30, 40 and 50 psi) and annealed at 500 o C temperature for 2hrs.…”

“…The electrical and optical properties of transparent conducting oxide films were found to depend on composition, structure, crystallinity defect density, surface roughness and dopant concentration [5][6][7]. The importance of aluminum zinc oxide Al 2 ZnO 4 is due to its wide band gap which gives the uniqueness property where it has been weakly studied for various practical applications such as solar cells [ 8], flat panel display [9], surface acoustic devices, optical waveguide , gas sensors micro machined actuator [10][11][12]. The physical properties of the films depend strongly on the condition of preparation as deposition technique, the growth methods and post deposition treatment.…”

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

“…Transparent Conductive Oxides (TCO) films play a significant role as an transparent electrode in the optoelectronic and photovoltaic devices, especially in thin films solar cells [1][2][3][4][5][6]. The most widely used TCO, both in research and industry, are Indium Tin Oxide (ITO) films, because they are characterized by a good electrical and optical properties.…”

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

“…At the present time, AZO and B-doped ZnO (BZO) thin films are in practical use for transparent electrode applications in CuIn 1-X Ga X Se 2 -based thin-film solar cells [9][10][11][12]. In addition, impurity-doped ZnO thin films, such as AZO, GZO and BZO with a textured surface structure as well as a high transmittance in the near-infrared region, have recently attracted much attention for transparent electrode applications in Si-based thin-film solar cells [13][14][15][16][17][18][19][20][21][22][23][24]. It is necessary to form impurity-doped ZnO thin films with a doubly textured surface structure that can effectively scatter the incident visible and near-infrared light [25].…”