High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Fritschi, R.; Frederico, Sebastien; Hibert, C.; Flückiger, Ph.; Renaud, Philippe; Tsamados, Dimitrios; Boussey, J.; Chovet, A.; Ng, Ray Kit; Udrea, F.; Curty, J.-P.; Dehollain, Catherine; Declercq, M.; Ionescu, Adrian M.

doi:10.1016/j.mee.2004.03.015

Cited by 14 publications

(6 citation statements)

References 1 publication

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“…With this condition, the measured values have been fitted to an exponential function that is the theoretically expected behavior (Fig.7). The tuning factor (sensitivity) is lower than the presented by Fritschi et al [9] but the tuning DC voltage range is higher. The develop devices can handle properly high level AC signals up to 30V RMS with a reduced interference factor.…”

Section: Designcontrasting

confidence: 56%

High Q factor RF MEMS Tunable Metallic Parallel Plate Capacitor

Etxeberria

Gracia

2007

2007 Spanish Conference on Electron Devices

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This paper reports the fabrication and electrical characterization of a MEMS metallic tunable capacitor to be used as voltage controlled device in tuning telecommunication circuits. A novel fabrication process to obtain parallel plate metallic capacitors based on deep reactive ion etching (DRIE) bulk micromachining techniques have been developed. Devices of three different electrode areas have been fabricated and the influence of the area in the main characteristics of the MEMS capacitors has been established. The interaction of the DC tuning voltage and AC signal and their influence on the tuning behavior has been analyzed and the top limits have been estimated. This fabrication process already had been used to develop zipper actuation capacitors but not to fabricate parallel plate actuation capacitors. The obtained results make this kind of MEMS tunable metallic capacitors appropriate candidates for its use in the new power MEMS scenario.

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Section: Designcontrasting

confidence: 56%

High Q factor RF MEMS Tunable Metallic Parallel Plate Capacitor

Etxeberria

Gracia

2007

2007 Spanish Conference on Electron Devices

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“…Materials that can be processed at CMOS-compatible temperatures include metals and amorphous silicon. However, even though the use of these materials as MEMS structural materials has been demonstrated [31][32][33][34][35][36], they are not ideal candidates due to the performance and reliability problems they might cause. For example, certain metals, like Al, exhibit a tendency to creep, which might result in reliability problems and degraded performance in devices such as pressure sensors or RF switches [37].…”

Section: Cmos-mems Integration: Why How and What?mentioning

confidence: 99%

“…For this reason, the use of metals in piezoresistive pressure sensors is very limited. On the other hand, several metal-based MEMS capacitive pressure sensors have been proposed [32,[86][87][88].…”

Section: Technologies For Mems Pressure Sensorsmentioning

confidence: 99%

Introduction

Ruiz

Meyer

Witvrouw

2013

Poly-SiGe for MEMS-above-CMOS Sensors

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“…By using standard optical lithography and bulk micromachining techniques [10], [11], we have developed a process to fabricate parallel-plate capacitors with a vacuum gap between the plates. The complete process is summarized in Fig.…”

Section: A Vgc With Si-postsmentioning

confidence: 99%

Vacuum-Gap Capacitors for Low-Loss Superconducting Resonant Circuits

Cicak

Allman

Strong

et al. 2009

IEEE Trans. Appl. Supercond.

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Abstract-Low-loss microwave components are used in many superconducting resonant circuits from multiplexed readouts of low-temperature detector arrays to quantum bits. Two-level system defects in amorphous dielectric materials cause excess energy loss. In an effort to improve capacitor components, we have used optical lithography and micromachining techniques to develop superconducting parallel-plate capacitors in which lossy dielectrics are replaced by vacuum gaps. Resonance measurements at 50 mK on lumped LC circuits that incorporate these vacuum-gap capacitors (VGCs) reveal loss tangents at low powers as low as 4×10 -5 , significantly lower than with capacitors using amorphous dielectrics. VGCs are structurally robust, small, and easily scaled to capacitance values above 100 pF.

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High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Cited by 14 publications

References 1 publication

High Q factor RF MEMS Tunable Metallic Parallel Plate Capacitor

High Q factor RF MEMS Tunable Metallic Parallel Plate Capacitor

Introduction

Vacuum-Gap Capacitors for Low-Loss Superconducting Resonant Circuits

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