High vacuum molecular beam epitaxy for the growth of IV–VI compounds

Frank, N.; Voitecek, A.; Clemens, Helmut; Holzinger, Alexandra; Bauer, G.

doi:10.1016/0022-0248(93)90036-v

Cited by 16 publications

(8 citation statements)

References 23 publications

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“…Detailed studies showed homogeneous impurity distribution and good structural properties of the epilayers [8]. For IV-VI group we used PbTe:Bi films with thickness of 0.5 μm, grown onto BaF 2 substrate (with Ρb 0.94Eu0.06 Te buffer layer) and PbSe films with thickness of 1.7 μm, deposited directly onto BaF2 [9,10]. Electron concentration ranged from 1 x 10 16 to 6 x 1017 cm-3 .…”

Section: Fabrication Methods and Materialsmentioning

confidence: 99%

Electron Transport in Submicron Wires of Semiconductors

Wróbel

1996

Acta Phys. Pol. A

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We review the methods of fabrication and transport properties of submicron II-VI, IV-VI and IlI-V semiconductor wires. Devices were prepared by electron-beam lithograply and used for detailed magnetotransport studies, carried out at low (down to 30 mK) temperatures. We discuss a number of novel features obtained in ballistic, diffusive and localized transport regimes. Iń particular, we describe the universal conductance fluctuations for semimagnetic materials (CdMnTe) and discuss the edge channel transport for PbTe, PbSe and GaAs/GaA1As systems.

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Section: Fabrication Methods and Materialsmentioning

confidence: 99%

Electron Transport in Submicron Wires of Semiconductors

Wróbel

1996

Acta Phys. Pol. A

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“…Luscher reviewed the basic considerations of MBE chamber design in 1979 8 and much work has been done since then, including the design of in situ substrate exchangers for multiple sample fabrication 9 and implementation of characterization tools such as scanning electron microscopy for in situ microstructure characterization. 10 MBE has been applied to many materials including III-V, 11 and II-VI semiconductors, 12 as well as complex high temperature superconductors like Yttrium Barium Copper Oxide (YBCO). 13 While MBE can be used to grow MIM structures, it is a remarkably expensive process, which limits MBE's applicability in small scale research and high-end electronics commercialization.…”

Section: Fig 1 In Traditional Josephson Junction (Jj) Fabrication Tmentioning

confidence: 99%

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Elliot

Malek

et al. 2014

Review of Scientific Instruments

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Articles you may be interested inResistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods J. Vac. Sci. Technol. B 33, 052204 (2015) Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al 2 O 2 /Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al 2 O 3 tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers. © 2014 AIP Publishing LLC. [http://dx

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“…Another advantage of MBE-grown Pb-salt structures is that the sticking coefficients of well-known MBE growth chamber contaminants are unusually low. 19 …”

Section: Introductionmentioning

confidence: 97%