High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure

Hult, Björn; Thorsell, Mattias; Chen, Jr-Tai; Rorsman, Niklas

doi:10.1109/led.2022.3163885

Cited by 12 publications

(4 citation statements)

References 28 publications

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“…However, in the “buffer‐free” heterostructure, the vertical breakdown in the SiC substrate is not primarily limiting the breakdown voltage. [ 9 ] The reduced breakdown for the mesa–isolated MISHEMTs is likely caused by surface states induced by the dry etch used to form the mesa or by a high electric field peak in the SiC trench.…”

Section: Resultsmentioning

confidence: 99%

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Investigation of Isolation Approaches and the Stoichiometry of SiN_xPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Hult

Thorsell

Chen

et al. 2022

Physica Status Solidi (a)

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Section: Resultsmentioning

confidence: 99%

“…[7,8] Previously, we have presented a heterostructure that can avoid carbon-related trapping effects in the GaN layers and, therefore, potentially reduce R on,dyn . [9] In this heterostructure, no highly doped buffer layer is used. Instead, a 265 nm UID GaN layer is grown between a thin AlGaN barrier layer and an AlN nucleation layer.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Isolation Approaches and the Stoichiometry of SiN_xPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Hult

Thorsell

Chen

et al. 2022

Physica Status Solidi (a)

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“…As a result, its use has been rapidly growing in power electronic devices such as aerospace materials, automotive driving, and high power converters [5]- [7]. They can be considered as the third generation of semiconductor which also happens to show a better performance compared to silicon (Si) and gallium arsenide (GaAs) as the first and second generations of semiconductors, respectively [8].Yet, due to fabrication issues, SiC wafers might still contain a variety of defects that can put the device's performance at risk [9]- [15]. Defects in such semiconductor wafers can be classified into two categories -crystallographic defects found within the wafer, and morphological defects present on or near the wafer surface.…”

Section: Introductionmentioning

confidence: 99%

Coherent Fourier Scatterometry for Detection of Killer Defects on Silicon Carbide Samples

Rafighdoost,

Kolenov,

Pereira

2024

IEEE Trans. Semicond. Manufact.

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It has been a widely growing interest in using silicon carbide (SiC) in high-power electronic devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and make the device fall into unexpected failures. To prevent these failures from happening, it is very important to develop inspection tools that can detect, characterize and locate these defects in a non-invasive way. Current inspection techniques such as Dark Field or Bright field microscopy are effectively able to visualize most such defects; however, there are some scenarios where the inspection becomes problematic or almost impossible, such as when the defects are too small or have low contrast or if the defects lie deep into the substrate. Thus, an alternative method is needed to face these challenges. In this paper, we demonstrate the application of coherent Fourier scatterometry (CFS) as a complementary tool in addition to the conventional techniques to overcome different and problematic scenarios of killer defects inspection on SiC samples. Scanning electron microscopy (SEM) has been used to assess the same defects to validate the findings of CFS. Great consistency has been demonstrated in the comparison between the results obtained with CFS and SEM.

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“…Chen [ 15 ] and Hult [ 16 ] et al proposed an epi-structure named QuanFINE based on a SiC substrate that skipped the thick buffer layer between the AlN nucleation layer and GaN channel layer, showing some superiority in their reports, respectively. However, the properties of the epitaxial wafer and the device performance based on this novel epi-structure have not been studied in detail yet.…”

Section: Introductionmentioning

confidence: 99%

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Zhang,

Wang,

Zhu

et al. 2023

Micromachines

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A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer layer. Compared to the conventional epi-structures on the SiC and Si substrates, the non-buffer epi-AlGaN/GaN structure had a better crystalline quality and surface morphology, with reliable control of growth stress. Hall measurements showed that the novel structure exhibited comparable transport properties to the conventional epi-structure on the SiC substrate, regardless of the buffer layer. Furthermore, almost unchanged carrier distribution from room temperature to 150 °C indicated excellent two-dimensional electron gas (2DEG) confinement due to the pulling effect of the conduction band from the nucleation layer as a back-barrier. High-performance depletion-mode MIS-HEMTs were demonstrated with on-resistance of 5.84 Ω·mm and an output current of 1002 mA/mm. The dynamic characteristics showed a much smaller decrease in the saturation current (only ~7%), with a quiescent drain bias of 40 V, which was strong evidence of less electron trapping owing to the high-quality non-buffer AlGaN/GaN epitaxial growth.

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High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure

Cited by 12 publications

References 28 publications

Investigation of Isolation Approaches and the Stoichiometry of SiN_xPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Investigation of Isolation Approaches and the Stoichiometry of SiN_xPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Coherent Fourier Scatterometry for Detection of Killer Defects on Silicon Carbide Samples

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

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High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure

Cited by 12 publications

References 28 publications

Investigation of Isolation Approaches and the Stoichiometry of SiNxPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Investigation of Isolation Approaches and the Stoichiometry of SiNxPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Coherent Fourier Scatterometry for Detection of Killer Defects on Silicon Carbide Samples

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

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Product

Resources

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Investigation of Isolation Approaches and the Stoichiometry of SiN_xPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Investigation of Isolation Approaches and the Stoichiometry of SiN_xPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors