2011
DOI: 10.1016/j.engfracmech.2011.05.010
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High yield four-point bend thin film adhesion testing techniques

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Cited by 27 publications
(10 citation statements)
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“…In that case Γ and G 0 would be equal. Measuring Γ as a function of the environment would also be beneficial, although these measurements can be challenging for such thin coatings [32]. For applications such as flexible and stretchable electronics mentioned in the introduction, the fatigue degradation properties of ALD titania should be directly characterized on soft substrates to account for the importance of substrate's compliance (and roughness) on the strain energy release rate calculations, their critical values (especially Γ), and the corresponding crack growth rates.…”
Section: Resultsmentioning
confidence: 99%
“…In that case Γ and G 0 would be equal. Measuring Γ as a function of the environment would also be beneficial, although these measurements can be challenging for such thin coatings [32]. For applications such as flexible and stretchable electronics mentioned in the introduction, the fatigue degradation properties of ALD titania should be directly characterized on soft substrates to account for the importance of substrate's compliance (and roughness) on the strain energy release rate calculations, their critical values (especially Γ), and the corresponding crack growth rates.…”
Section: Resultsmentioning
confidence: 99%
“…For mechanical strength characterization of interfaces, the four point bending test is widely used [1][2][3]. Typically, this is done by depositing a thin film stack on a substrate and gluing the other end to an identical substrate.…”
Section: A Adhesion Characterization By Four Point Bending Testmentioning
confidence: 99%
“…After applying significant force, small pieces at the edge would chip off, cracking through the silicon bulk rather than the interface. 22 Measuring adhesion or bond strength in ductile films is often difficult, 23 and the fracture energy of the subeutectic 400 C Al-Ge bond may have been greater than could be successfully measured using specimens fabricated from the brittle Si substrates used in this study. 19 The measurement was performed on 40 mm long and 4 mm wide beams cut out from eutectically bonded wafers at 435 C with deposited Al-Ge layer thickness of 318 nm.…”
Section: A Characterization Of the Al-ge Bondsmentioning
confidence: 99%