High-Yield, Ultrafast, Surface Plasmon-Enhanced, Au Nanorod Optical Field Electron Emitter Arrays

Hobbs, Richard G.; Yang, Yujia; Fallahi, Arya; Keathley, Phillip D.; Leo, Eva De; Kärtner, Franz X.; Graves, W.; Berggren, Karl K.

doi:10.1021/nn504594g

Cited by 81 publications

(91 citation statements)

References 37 publications

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“…investigations with metallic nanoparticles have shown similar extracted field enhancements 12,13,17,18 and peak fields 9,12,13 , and these high peak fields could lead to nanoparticle damage via electromigration or field evaporation 17,31 . However, over 10 min of continuous illumination, we observe current fluctuations of only ≈2%, and subsequent inspection of the emitters reveals minimal damage.…”

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confidence: 83%

“…When a laser pulse illuminates a metallic nanoparticle, the incident field can resonantly drive collective oscillations of the particle's conduction electrons 23,24 . These localized surface plasmon resonances yield dramatically enhanced local fields, and similar to nanotips, metallic nanoparticles have shown strong-field behaviours in their photoemission currents and energy spectra 9,12,13,[16][17][18] . Here, we report the first measurements of CEP-sensitive, strongfield photoemission from metallic nanoparticles.…”

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confidence: 99%

“…For instance, when an intense laser pulse interacts with an atomic gas, individual cycles of the incident electric field ionize gas atoms and steer the resulting attosecond-duration electrical wavepackets 1,2 . Such field-controlled light-matter interactions form the basis of attosecond science and have recently expanded from gases to solid-state nanostructures [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] . Here, we extend these field-controlled interactions to metallic nanoparticles supporting localized surface plasmon resonances.…”

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Optical-field-controlled photoemission from plasmonic nanoparticles

et al. 2016

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At high intensities, light-matter interactions are controlled by the electric field of the exciting light. For instance, when an intense laser pulse interacts with an atomic gas, individual cycles of the incident electric field ionize gas atoms and steer the resulting attosecond-duration electrical wavepackets 1,2 . Such field-controlled light-matter interactions form the basis of attosecond science and have recently expanded from gases to solid-state nanostructures [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] . Here, we extend these field-controlled interactions to metallic nanoparticles supporting localized surface plasmon resonances. We demonstrate strong-field, carrier-envelope-phase-sensitive photoemission from arrays of tailored metallic nanoparticles, and we show the influence of the nanoparticle geometry and the plasmon resonance on the phase-sensitive response. Additionally, from a technological standpoint, we push strong-field light-matter interactions to the chip scale. We integrate our plasmonic nanoparticles and experimental geometry in compact, microoptoelectronic devices that operate out of vacuum and under ambient conditions.Moving from low to high optical intensity, photoemission goes from photon-driven to field-controlled. Consider illuminating a metallic surface with an infrared femtosecond laser pulse with electric field F(t) = F 0 A(t) cos(ωt + ϕ), where F 0 is the peak field, A(t) is the normalized pulse envelope, ω is the carrier frequency, and ϕ is the carrier-envelope phase (CEP). When the pulse interacts with the metallic surface, electrons are excited out of the metal and into the surrounding vacuum. At typical incident intensities, this photoemission process is photon-driven: emission is dictated by the pulse's photon energy, that is, ω, and photon flux, that is, the pulse's intensity envelope ∝ |F 0 A(t)| 2 . At high intensities, this photoemission process resembles field-controlled tunnelling. The strong electric field of the pulse deflects the binding potential of the metallic surface and drives electron tunnelling through the distorted barrier. This tunnelling occurs over a timescale τ t = √ 2mW F /eF 0 , where W F is the workfunction of the surface, m is the electron mass, and e is its charge 19,20 . With sufficiently strong F 0 , τ t becomes shorter than the characteristic cycle time of the exciting laser light (τ t < τ cyc = 1/ω), and individual cycles of the driving electric field eject subcycle electrical bursts from the metal and steer these ultrafast currents through the surrounding vacuum 6,8 ; in this strongfield regime, photoemission is controlled by the driving optical electric field and, accordingly, by the CEP, ϕ.In recent years, metallic nanotips have emerged as platforms to non-destructively investigate photoemission in the strong-field regime. When a nanotip is illuminated by a femtosecond laser pulse, the incident field is locally enhanced at the apex of the tip. Due primarily to the tip's sharp geometry, the field enhancement is typically <10, and th...

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Optical-field-controlled photoemission from plasmonic nanoparticles

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“…3(f) we can also find that the resistivity of the gold nanowire increases obviously with the decrease of its width, which may originate from both the diffuse surface scattering and grain-boundary scattering of the electrons. 27,28 To meet the ever-growing demands for nanoelectronics and nanophotonics, 1,6,7,12,29,30 lots of nanodevices have to be fabricated on insulating substrates such as SiO 2 , quartz glass, and plastics, etc. However, direct-writing-based EBL processes cannot work well with insulating substrates because of the unfavorable and even destructive charging effect.…”

Section: Experimental and Discussionmentioning

confidence: 99%

“…This is not only due to their strategic importance in future device miniaturization, but also because of their fascinating properties arising from the strongly confined states or the pronounced surface/edge effects. [1][2][3][4][5][6][7][8] Therefore, many efforts have been made to fabricate nanostructures with ultrafine sizes and controlled shapes through various methods such as wet chemistry synthesis, 9,10 vapor-liquid-solid (VLS) growth, 11 extreme ultraviolet (EUV) lithography, 12,13 electron beam lithography (EBL), 14,15 focused ion beam lithography (FIB) 16,17 and some other technologies. 18 Among these methods, the wet chemical approaches are efficient to synthesize regular-shape ultrafine nanostructures with good shape control, however, they are problematic to make arbitrary-/complex-shaped structures and always suffer from the difficulty in addressable integration and precise manipulation.…”

Section: Introductionmentioning

confidence: 99%

Highly efficient and controllable method to fabricate ultrafine metallic nanostructures

Cai

Zhang

et al. 2015

AIP Advances

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We report a highly efficient, controllable and scalable method to fabricate various ultrafine metallic nanostructures in this paper. The method starts with the negative poly-methyl-methacrylate (PMMA) resist pattern with line-width superior to 20 nm, which is obtained from overexposing of the conventionally positive PMMA under a low energy electron beam. The pattern is further shrunk to sub-10 nm line-width through reactive ion etching. Using the patter as a mask, we can fabricate various ultrafine metallic nanostructures with the line-width even less than 10 nm. This ion tailored mask lithography (ITML) method enriches the top-down fabrication strategy and provides potential opportunity for studying quantum effects in a variety of materials. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

Manfrinato

Camino

Stein

et al. 2019

Adv Funct Materials

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Patterning of materials at single nanometer resolution allows engineering of quantum confinement effects, as these effects are significant at these length scales, and yields direct control over electro‐optical properties. Silicon is by far the most important material in electronics, and the ability to fabricate Si‐based devices of the smallest dimensions for novel device engineering is highly desirable. The work presented here uses aberration‐corrected electron‐beam lithography combined with dry reactive ion etching to achieve both: patterning of 1 nm features and surface and volume plasmon engineering in Si. The nanofabrication technique employed here produces nanowires with a line edge roughness (LER) of 1 nm (3σ). In addition, this work demonstrates tuning of the Si volume plasmon energy by 1.2 eV from the bulk value, which is one order of magnitude higher than previous attempts of volume plasmon engineering using lithographic methods.

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High-Yield, Ultrafast, Surface Plasmon-Enhanced, Au Nanorod Optical Field Electron Emitter Arrays

Cited by 81 publications

References 37 publications

Optical-field-controlled photoemission from plasmonic nanoparticles

Optical-field-controlled photoemission from plasmonic nanoparticles

Highly efficient and controllable method to fabricate ultrafine metallic nanostructures

Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

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