Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

Abstract

Patterning of materials at single nanometer resolution allows engineering of quantum confinement effects, as these effects are significant at these length scales, and yields direct control over electro‐optical properties. Silicon is by far the most important material in electronics, and the ability to fabricate Si‐based devices of the smallest dimensions for novel device engineering is highly desirable. The work presented here uses aberration‐corrected electron‐beam lithography combined with dry reactive ion etching to achieve both: patterning of 1 nm features and surface and volume plasmon engineering in Si. The nanofabrication technique employed here produces nanowires with a line edge roughness (LER) of 1 nm (3σ). In addition, this work demonstrates tuning of the Si volume plasmon energy by 1.2 eV from the bulk value, which is one order of magnitude higher than previous attempts of volume plasmon engineering using lithographic methods.

Atomic Layer Deposition of Nanolayered Carbon Films

“…The electric field made the ionic species flow in a certain direction, and the ionic species moving in order facilitated the growth of the nanostructured carbon films or graphene. Nanoscale holes could be precisely patterned and fabricated with the hole diameter, down to a few nanometers, using the nanofabrication patterning techniques [56]; further research on the growth of carbon films on a substrate with uniform-patterned nanoscale holes may confirm the mechanism or suggest a different explanation about the phenomenon that the formation of the amorphous carbon layer could be varied by the existence of defective sites (nanoscale holes or cracks) on the substrate.…”

Broadband photonic topological insulator based on triangular-holes array with higher energy filling efficiency

“…As shown in Figure 5, the bandwidth only decreases slightly as 1450-1683 nm (γ 14.87%) under the 1%, 5°, 3%, and 3% random-bias of the offset, the rotation, the scaling, and the deformation, respectively. This preparation tolerance (about 4 nm) can be realized by the current nanofabrication technology, such as the aberration-corrected electronbeam lithography [22].…”

Assembled Au/ZnO Nano-Urchins for SERS Sensing of the Pesticide Thiram

“…This technique consists in the use of plasmonic or hybrid (metal/semiconductor) nanostructures/nanoparticles [ 13 , 14 , 15 , 16 , 17 , 18 , 19 ] in order to improve the SERS signal of biochemical analytes via electric fields of the plasmonic or hybrid nanostructures/nanoparticles [ 20 ]. These plasmonic nanostructures/nanoparticles can be fabricated by chemical synthesis [ 21 , 22 , 23 , 24 ] or lithographic techniques [ 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ]. Moreover, several groups have already investigated plasmonic or hybrid nanostructures/nanoparticles for thiram detection by SERS with detection limits varying from 10 M to 10 M [ 33 , 34 , 35 , 36 , 37 ].…”