High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose

Du, Xinzhe; Zhi, Luo; Shen, Shengchun; Bai, Weiping; Gao, Hui; Yin, Yuewei; Li, Xiaoguang

doi:10.1016/j.apsusc.2023.158078

Cited by 3 publications

(2 citation statements)

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“…Besides, oxygen migration may be another important factor contributing to the coercive field difference mentioned above, which may be correlated with crystalline orientation and can provide a possible underlying mechanism to account for the difference in ferroelectricity for (001)-and (111)oriented films. Previous in-situ electron microscopy investigations evidenced the ferroelectric switching in hafnia-based films is intertwined with oxygen migration [17], and it has been widely considered that oxygen ions are closely associated with the phase and properties of hafnia-based films [17,[44][45][46][47]. To quantitatively investigate the oxygen content in (001)-and (111)-oriented films, XPS measurements were carried out [45,[48][49][50].…”

Section: Resultsmentioning

confidence: 99%

“…Previous in-situ electron microscopy investigations evidenced the ferroelectric switching in hafnia-based films is intertwined with oxygen migration [17], and it has been widely considered that oxygen ions are closely associated with the phase and properties of hafnia-based films [17,[44][45][46][47]. To quantitatively investigate the oxygen content in (001)-and (111)-oriented films, XPS measurements were carried out [45,[48][49][50]. Prior to the formal measurements, in-situ argon ion etching was employed to eliminate surface adsorbed contaminants such as carbon, nitrogen, so as to obtain more intrinsic signals from the films (figure S8 in supplementary material).…”

Section: Resultsmentioning

confidence: 99%

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Control of intrinsic ferroelectricity and structural phase in pure HfO₂ films via crystalline orientation

Zhang,

Tu,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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The ferroelectricity of hafnia-based thin films has garnered considerable attention in both academic researches and industrial applications. However, the fundamental properties, such as high coercivity, the wake-up effect, and the mechanism of ferroelectricity have not been fully elucidated. Here we report the crystallization orientation control of structural phase and ferroelectricity in pure HfO2 thin films. Both (001)- and (111)-oriented HfO2 thin films exhibit a mixture of ferroelectric orthorhombic and non-ferroelectric monoclinic phases. With decreasing film thickness, the orthorhombic phase ratio increases for both orientations, with a consistently higher proportion for (111)-oriented film. Consequently, the ferroelectricity is significantly enhanced in thinner (111)-oriented film. Remarkably, both (001)- and (111)-oriented pure HfO2 thin films demonstrate an intrinsic ferroelectricity. Moreover, the coercive field of the (001)-oriented film appears to be lower than that of the (111)-oriented film. Additionally, oxygen ions migrate more easily in the (001)-oriented film, which exhibits distinct electronic structure and local atomic ordering compared to the (111)-oriented film. These results provide valuable insights into the ferroelectricity of HfO2 and suggest that crystalline orientation is an effective approach to explore the ferroelectric properties in hafnia-based films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Control of intrinsic ferroelectricity and structural phase in pure HfO₂ films via crystalline orientation

Zhang,

Tu,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics

Oh,

Jang,

Habibi

et al. 2024

Adv Materials Technologies

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With the increasing demand for high‐performance computing and storage solutions, industries are under pressure to deliver enhanced‐density, high‐speed, cost‐efficient, and reliable memory technologies. The development of advanced high dielectric constant (high‐k) dielectrics for dynamic random‐access memory (DRAM) remains essential yet challenging, with a need for further advancements on scaling and mass production compatibility. A significant advancement has been the discovery of morphotropic phase boundary (MPB) in HfO2‐based ferroelectrics, offering a potential solution to enduring issues in DRAM capacitor technology. The superior performance of MPB‐based HfxZr1‐xO2 film systems as high‐k dielectrics (k > 60) provides a promising avenue for advancing DRAM technology. This review article aims to propel DRAM development by detailing the principles of MPB‐based high‐k dielectrics, outlining crucial material and engineering parameters, and addressing the need for precise evaluation and analysis, which have previously been neglected. It also discusses the ongoing challenges and future directions in this field.

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Oxidizer Engineering of ALD for Efficient Production of ZrO₂ Capacitors in DRAM

Tang,

Li,

Miao

et al. 2024

IEEE Electron Device Lett.

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High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose

Cited by 3 publications

References 34 publications

Control of intrinsic ferroelectricity and structural phase in pure HfO₂ films via crystalline orientation

Control of intrinsic ferroelectricity and structural phase in pure HfO₂ films via crystalline orientation

Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics

Oxidizer Engineering of ALD for Efficient Production of ZrO₂ Capacitors in DRAM

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High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose

Cited by 3 publications

References 34 publications

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Exploring the Morphotropic Phase Boundary in HfO2‐Based Ferroelectrics for Advanced High‐k Dielectrics

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

Contact Info

Product

Resources

About

Control of intrinsic ferroelectricity and structural phase in pure HfO₂ films via crystalline orientation

Control of intrinsic ferroelectricity and structural phase in pure HfO₂ films via crystalline orientation

Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics

Oxidizer Engineering of ALD for Efficient Production of ZrO₂ Capacitors in DRAM