“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study

Green, M. L.; Schenck, Peter K.; Chang, Kao‐Shuo; Ruglovsky, Jennifer L.; Vaudin, Mark D.

doi:10.1016/j.mee.2009.03.068

Cited by 12 publications

(5 citation statements)

References 9 publications

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“…A recent paper reviews combinatorial oxide deposition technologies and their applications. 56 The continuous composition spread deposition techniques mainly include pulsed laser deposition (PLD), 57 sputtering, 58 and CVD (low pressure, 59 atmospheric, 60 aerosolassisted 61 ). Compared to these methods, CBVD has the unique advantage of allowing the reactant flows at each substrate point to be determined precisely and easily.…”

Section: ■ Introductionmentioning

confidence: 99%

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Wagner¹,

Sandu²,

Harada³

et al. 2016

ACS Comb. Sci.

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An innovative deposition system has been developed to construct complex material thin films from single-element precursors by chemical beam vapor deposition (CBVD). It relies on well distributed punctual sources that emit individually controlled precursor beams toward the substrate under high vacuum conditions combined with well designed cryo-panel surfaces that avoid secondary precursor sources. In this configuration the impinging flows of all precursors can be calculated at any substrate point considering the controlled angular distribution of the emitted beams and the ballistic trajectory of the molecules. The flow simulation is described in details. The major advantage of the deposition system is its ability to switch between several possible controlled combinatorial configurations, in which the substrate is exposed to a wide range of flow compositions from the different precursors, and a uniform configuration, in which the substrate is exposed to a homogeneous flow, even on large substrates, with high precursor use efficiency. Agreement between calculations and depositions carried out in various system configurations and for single, binary, or ternary oxides in mass transfer limited regime confirms that the distribution of incoming precursors on the substrate follows the theoretical models. Additionally, for some selected precursors and in some selected conditions, almost 100% of the precursor impinging on the substrate is incorporated to the deposit. The results of this work confirm the potentialities of CBVD both as a research tool to investigate efficiently deposition processes and as a fabrication tool to deposit on large surfaces.

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Section: ■ Introductionmentioning

confidence: 99%

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Wagner¹,

Sandu²,

Harada³

et al. 2016

ACS Comb. Sci.

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“…Many ceramics have been investigated, and new materials successfully discovered, by searches with combinatorial HT methods . Maybe the best known new material discovered via combinatorial searching is the Co-doped TiO 2 dilute magnetic semiconductor, leading to an explosion of interest in such materials. − Other examples include Zr 0.2 Sn 0.2 Ti 0.6 O 2 dielectrics, high ε r microwave dielectrics , cobalt oxide magnetoresistance materials, energy materials, novel photocatalysts, and catalysts from libraries of thousands of samples . One of the most successful fields recently has been phosphors based on rare earths, − lead free piezoelectrics have been discovered by searching HT films, and of particular interest was a 400 sample Sm- and Sc-substituted BiFeO 3 film library, which showed that only A-site substitutions affected piezoelectric and ferroelectric properties .…”

Section: Introductionmentioning

confidence: 99%

Combinatorial Bulk Ceramic Magnetoelectric Composite Libraries of Strontium Hexaferrite and Barium Titanate

Pullar

2012

ACS Comb. Sci.

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Bulk ceramic combinatorial libraries were produced via a novel, high-throughput (HT) process, in the form of polycrystalline strips with a gradient composition along the length of the library. Step gradient ceramic composite libraries with 10 mol % steps of SrFe12O19-BaTiO3 (SrM-BT) were made and characterized using HT methods, as a proof of principle of the combinatorial bulk ceramic process, and sintered via HT thermal processing. It was found that the SrM-BT libraries sintered at 1175 °C had the optimum morphology and density. The compositional, electrical and magnetic properties of this library were analyzed, and it was found that the SrM and BT phases did not react and remained discrete. The combinatorial synthesis method produced a relatively linear variation in composition. The magnetization of the library followed the measured compositions very well, as did the low frequency permittivity values of most compositions in the library. However, with high SrM content of ≥80 mol %, the samples became increasingly conductive, and no reliable dielectric measurements could be made. Such conductivity would also greatly inhibit any ferroelectricity and magnetoelectric coupling with these composites with high levels of the SrM hexagonal ferrite.

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“…The development of nanotechnology fabrications has led to rising interest in the thermal properties of nanostructures and nanostructured materials. These structures and materials will be included in new microelectronic devices 1,2 and microelectromechanical systems (MEMS) 3,4 whose behavior and reliability strongly depend on the way heat dissipated within the system can be evacuated. Excessive temperatures and temperature gradients may lead to system failure.…”

Section: Introductionmentioning

confidence: 99%

“…Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions Carolina Abs da Cruz, 1,2,a) Konstantinos Termentzidis, 1,2 Patrice Chantrenne, 1,2 and Xavier Kleber 2,3 The reliability of molecular dynamics (MD) results depends strongly on the choice of interatomic potentials and simulation conditions. Five interatomic potentials have been evaluated for heat transfer MD simulations of silicon, based on the description of the harmonic (dispersion curves) and anharmonic (linear thermal expansion) properties.…”

mentioning

confidence: 99%

Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions

Cruz

Termentzidis

Chantrenne

et al. 2011

Journal of Applied Physics

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“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study

Cited by 12 publications

References 9 publications

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Combinatorial Bulk Ceramic Magnetoelectric Composite Libraries of Strontium Hexaferrite and Barium Titanate

Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions

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