Highly accurate GaN HEMT model based on the Angelov model with error compensation

Abstract

With the development of the microelectronics, circuit design has become more and more important. In order to improve the accuracy of circuit design, it is necessary to improve the accuracy of the circuit model. This letter proposes an accurate method based on the Angelov model of the Gallium Nitride (GaN) high electron mobility transistors (HEMTs). For Angelov model, the fitting of DC curve is critically important. There are many parameters to fit and modify the fitting curve. Each parameter in the Angelov model has a physical meaning. Some parameters have significant influence on the fitting accuracy of the model. In this letter, the parameters sensitive to the accuracy of the model are evaluated, and formulated into a function of gate voltage and drain voltage. In order to further improve the accuracy of the model, the IV curves are compensated using the error function. A weight function is introduced to correct the error function and improve its compensation selectivity. The proposed method is an universal and effective method that significantly improves the accuracy of the Angelov model. The introduction of the error function and the weight function improve the accuracy obviously compared with the traditional Angelov model.