Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVD

Ataev, B. M.; Bagamadova, A. M.; Djabrailov, A.M.; Mamedov, V. V.; Rabadanov, R. A.

doi:10.1016/0040-6090(94)09485-3

Cited by 126 publications

(56 citation statements)

References 2 publications

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“…There have been a few reports on conductive epitaxial ZnO layers doped with Ga or Al [18,19]. The growth of ALD deposited monocrystalline layers has been proved to be possible as well [20][21][22][23], but the conductivity of these layers has not been examined.…”

Section: Introductionmentioning

confidence: 99%

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

et al. 2014

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The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2*10 -4 Ωcm with both the mobilities and the carrier concentrations very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate.

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Section: Introductionmentioning

confidence: 99%

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

et al. 2014

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“…A Group III element, Ga, was used as the donor dopant since it is known to incorporate substitutionally on Zn lattice sites, forming a donor level with an activation energy of about 50 meV. 10,11 Deposited films show high crystallinity, as evidenced by XRD and cathodoluminescence ͑CL͒ measurements. The heterojunction devices were fabricated by masking the surface, then using a 10% HNO 3 aqueous solution to etch down through 2ϫ2 mm 2 windows to remove ZnO and leave regions of the AlGaN layer exposed.…”

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confidence: 99%

“…A layer of n-type ZnO, about 1.0 m thick, was grown on the p-Al 0.12 Ga 0.88 N using chemical vapor deposition stimulated by an rf-discharge plasma. 9,10 The substrate temperature during growth was 400°C, and the donor a͒ Electronic mail: alivov@impt-hpm.ac.ru APPLIED PHYSICS LETTERS VOLUME 83, NUMBER 23 8 DECEMBER 2003 concentration, determined from Hall-effect measurements, was about 7ϫ10 17 cm Ϫ3 . A Group III element, Ga, was used as the donor dopant since it is known to incorporate substitutionally on Zn lattice sites, forming a donor level with an activation energy of about 50 meV.…”

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confidence: 99%

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Alivov

Kalinina

Cherenkov

et al. 2003

Applied Physics Letters

457

164

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We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I–V characteristics, with threshold voltage ∼3.2 V and low reverse leakage current ∼10−7 A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO.

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“…[ grown by chemical-vapor deposition. [43] The UV photovoltaic response of Ag-doped ZnO thin films deposited at different temperature has been studied. [44] The films were prepared on fused quartz substrates by pulsed laser deposition (PLD).…”

Section: Ultrafast Photoresponse In Oxide Filmsmentioning

confidence: 99%