Highly Conductive Films of Layered Ternary Transition‐Metal Nitrides

Abstract

Film studies: Epitaxial films of BaZrN(2) (see TEM image) and BaHfN(2) are grown by polymer-assisted deposition on SrTiO(3) (STO) substrates. The films are phase-pure, allowing the intrinsic physical properties of the ternary nitrides to be studied. From 5 to 300 K, the films exhibit metallic-like resistivity-temperature behavior, with large residual resistivity ratios.

First principles investigations on elastic and electronic properties of BaHfN2 under pressure

“…Hence, they only predict the related properties of the pure crystal through the test of the materials doped. Recently, in order to validate the predicted result is correct or not, Luo et al [11,12] obtained the single crystals by polymer-assisted deposition (PAD) method [13,14]. In addition, they found that both BaZrN 2 and BaHfN 2 show metalliclike resistivity-temperature behavior from 5 to 300 K with RRRs ( 300 K / 5 K ) as large as 396 and 203, respectively.…”

“…For examples, the synthesis of AMN 3 by Brese and Disalvo [15] and DiSalvo and Clarke [3], the synthesis, structure and magnetic properties of SrZrN 2 , SrHfN 2 , SrTiN 2 , BaHfN 2 and the BaHf 1−x Zr x N 2 solid solution by Gregory et al [16][17][18][19] and Sr 2 NbN 3 , BaThN 2 by Chen et al [20], a new PAD method to obtained ternary nitrides by Luo et al [11,12], the electronic and vibrational properties of BaHfN 2 by Kaur et al [21]. However, there are little reports on the inner properties of AMN 2 under pressure.…”

A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition

“…Recently, we have extended this technique to prepare epitaxial nitride films. For example, hexagonal GaN [51], superconducting cubic NbN [52] [55] have been successfully prepared by PAD. In this review, we will summarize the nitrides prepared by PAD as shown in Table 1.…”

Self-assembled c-axis oriented antiperovskite soft-magnetic CuNCo3 thin films by chemical solution deposition

“…On the other hand, the T n relationship can be well fitted at high temperatures (70-350 K) with n smaller than 1, which suggests that electron-phonon scattering is the dominant factor for resistivity. 44 At the low temperatures (5-70 K), the resistivity follows the r = r 0 + AT 2 law, where r 0 is the residual resistivity and A is the Fermi liquid transport coefficient, which suggests the Fermi liquid behavior at low temperatures due to the prominent electron-electron interaction and the freezing out of electron-phonon scattering. 45 The r 0 is 12.1, 16.7 and 26.9 mO cm and A is 1.03, 1.44 and 2.32 mO cm K À2 for the CNC/LAO(111) thin film, the CNC/LAO(001) thin film and the CNC/YSZ(001) thin film, respectively.…”