Highly Conductive <i>p</i>‐Type Zinc blende SiC Thin Films Fabricated on Silicon Substrates by Magnetron Sputtering

Kim, Kwang Joo; Kim, Min Hwan; Kim, Young‐Wook

doi:10.1111/jace.13988

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…In addition, the orientations of SiC indicated in the GIXRD spectrum agree with some studies in the literature [ 31 , 32 , 33 ]. We found that the peaks of the SiC matched well with those of α -SiC (6 H -SiC), however, it can be not excluded that β -SiC (3 C -SiC) exists.…”

Section: Resultssupporting

confidence: 89%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão

Vasconcelos²,

Pessoa

et al. 2018

Materials

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This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.

show abstract

Section: Resultssupporting

confidence: 89%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão

Vasconcelos²,

Pessoa

et al. 2018

Materials

View full text Add to dashboard Cite

show abstract

“…In addition, the orientations of SiC indicated in GIXRD spectrum is in agreement with some studies in the literature [25][26][27]. We found that the peaks of the SiC matched well with those of α-SiC (6H-SiC), however, it can be not excluded that the existence of β-SiC (3C-SiC).…”

Section: Sic Thin Film Structuresupporting

confidence: 91%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão¹,

Vasconcelos²,

Pessoa³

et al. 2018

Preprint

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This article reports a novel and efficient method to synthesize graphene by thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. A CO2 laser beam heating without vacuum or controlled atmosphere was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in form of small islands with quality, density and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibits a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafer, which indicates its potential for electronic device applications.

show abstract