A new method to produce bismuth titanate -titanium dioxide composites by modification of a TiO 2 film deposited on a variety of different glass substrates is reported. Using a simple SILAR method, BiOBr may be deposited upon TiO 2 surfaces, which upon heating forms a closely intercalated structure of bismuth titanate (Bi 4 Ti 3 O 12 , BTO) and TiO 2 . This new method expands the scope of the SILAR process, which is typically restricted to materials which can be formed from soluble precursors. This composite material has undergone a thorough materials characterisation to confirm the absence of the BiOBr precursor, and the formation of the new bismuth titanate phase. The electronic structure of the heterojunction formed has also been investigated by valence band XPS and diffuse reflectance measurements, and a plausible band structure proposed. The immobilised composites have then been applied to the photocatalytic degradation of organic pollutants and bactericidal testing, as well as stability tests and identification of the key reactive species. Further photocatalytic studies have been carried out on this material in a synthetic wastewater medium, taking a step towards application under real-world conditions.
IntroductionThe availability of clean water has been identified as one of the United Nations' global goals for sustainable development. 1 The provision of this basic resource for a rapidly growing global population poses significant challenges, namely the extreme low cost and lack of extensive infrastructure required to be viable in the developing world. Semiconductor photocatalysis has the potential to fit this niche well, particularly when operated using freely available sunlight. Indeed, it is often the regions of the globe worst affected by poor water quality that have reliable sunshine over much of the year.
2Through the generation of reactive species, semiconductor photocatalysis has been proven to be effective in the destruction of organic pollutants 3 and bacteria. 4,5 For this purpose, titanium dioxide (TiO 2 ) is a material which is subject to considerable attention 6,7 due to the high natural abundance of its constituent elements in the earth's crust, 8 low cost 9 and low toxicity. 10 However, due to the wide band gap of 3-3.2 eV, the use of TiO 2 under solar irradiation is limited to the UV portion of the spectrum (∼5%). In addition, recombination of photo-generated charges has been found to be orders of magnitude faster than surface reactions, 11,12 causing most of the photo-excited holes and electrons to recombine before being able to generate any useful species. One method by which TiO 2 can be given both visible light activity and a mechanism to allow charges to separate is to form a heterojunction with another, narrower band gap semiconductor. 13 The narrower band gap allows excitation by visible light, and the interface between the two materials allows charges to be separated in space and therefore recombination is hindered. method to prepare a titanate semiconductor due to the insolubilit...