Highly Doped Si Single Crystal Nanowires via Metallic Flux Nanonucleation

Campanelli, Raul Back; Santos, Marcos V. Puydinger dos; Cruz, Alexsandro S. E. da; Pirota, K. R.; Béron, Fanny

doi:10.1109/tnano.2021.3112905

Cited by 4 publications

(3 citation statements)

References 24 publications

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“…Interestingly, while the two largest nanowires present almost the same values of the phonons characteristic temperature ( R q ), a reduction of 37% was found for the smallest one. Such a reduction is discussed in terms of the increasing surface contribution of the nanowire with 180 nm in diameter and the Ga doping, which is consequential in the flux growth, as already considered in [2,17]. In summary, our work sheds light on the Mn 5 Si 3 growth mechanism via MFNN, and it goes a step further into the dimensionality effect on the nanowires' transport properties, which in turn contributes to the technological control for future applications.…”

Section: Introductionsupporting

confidence: 51%

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Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

et al. 2022

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Mn5Si3 nanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this sense, growing Mn5Si3 nanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of Mn5Si3 nanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures. Our calculation allows us, by using the Washburn equation for pore infiltration, to give a guess on why we obtain Mn-rich nanowires. In addition, some morphological aspects of the diameter-modulated Mn5Si3 nanowires were discussed based on the classical nucleation theory. From the resistivity measurements for the smallest diameter among the nanowires, we observed a significant reduction of around 37 % of the phonons characteristic temperature by fitting the Bloch-Grünesein formula with other sources of scattering. Our results lead to a better understanding on the recent metallic flux nanonucleation growth method, as well as going a step further into the electronic transport properties of the Mn5Si3 nanowires.

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Section: Introductionsupporting

confidence: 51%

“…´- [17]. Therefore, it is fair to assume that Ga effectively dopes our nanowires and it might influence the phonon spectrum of the material.…”

Section: Propertiesmentioning

confidence: 99%

Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

et al. 2022

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“…The device was built using the conventional CMOS technology in conjunction with the electrical manipulation of nickel nanowires by means of the dielectrophoresis. The nanowires were previously grown by electrodeposition on anodic alumina oxide (AAO) templates, which is a high-yield technique for the growth of nanowires of a variety of materials, including semiconductor ones [53]. This MagFET prototype can pave the way to further implementation of versatile CMOS-compatible devices based on spintronics.…”

Section: Other Novel Materials For Nanowire-based Devicesmentioning

confidence: 99%

Silicon Nanowire Technologies: brief review, home-made solutions and future trends

Stucchi-Zucchi

Santos

Rufino

et al. 2022

JICS

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The silicon nanowire (SiNW) is poised to become an industry standard on the upcoming technological nodes. It presents improved current drive and modulation, minimized footprint, stackability, and a host of different beneficial characteristics. The last few years of research have focused on solving the last remaining challenges of SiNW fabrication as they roll into commercial usage. Now, novel devices, as well as channel and device stacking for 3D VLSI applications is being studied. As well as how can the SiNW geometry can be harnessed for More Than Moore materials and applications. In this review, we present a sample of the range of devices, techniques and applications of SiNW structures, alongside novel developments in the research carried out at University of Campinas. Demonstrations of JLFETs fabricated using Ga+-FIB, e-beam lithography, silicon etching in NH4OH solution, FinFETs fabricated using Ga+ lithography and strained silicon structures are shown. Promising future developments in VLSI and More Than Moore applications such as vertically stacked nanowire geometries, graphene nanoribbon devices, and MagFETs are also presented.

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The Fabrication of High-Anisotropy Silicon Nanowires Based on MACE Method for Photonic Sensor

Mohamedyaseen

Kumar²

2022

Silicon

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Highly Doped Si Single Crystal Nanowires via Metallic Flux Nanonucleation

Cited by 4 publications

References 24 publications

Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

Silicon Nanowire Technologies: brief review, home-made solutions and future trends

The Fabrication of High-Anisotropy Silicon Nanowires Based on MACE Method for Photonic Sensor

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