2014 20th International Conference on Microwaves, Radar and Wireless Communications (MIKON) 2014
DOI: 10.1109/mikon.2014.6899969
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Highly efficient and wideband harmonically tuned GaN-HEMT power amplifier

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Cited by 14 publications
(5 citation statements)
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“…The package of the device was de‐embedded in order to study the waveforms of the voltage and current at the intrinsic drain plane 11 . The packaging structure of the device is shown in Figure 2.…”
Section: Simulation and Experimental Resultsmentioning
confidence: 99%
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“…The package of the device was de‐embedded in order to study the waveforms of the voltage and current at the intrinsic drain plane 11 . The packaging structure of the device is shown in Figure 2.…”
Section: Simulation and Experimental Resultsmentioning
confidence: 99%
“…Figure 2 shows the topology of the DBHCN with the package parasitic structure. 11 The DBHCN of the PA includes a high-frequency harmonic control network (HHCN) and a low-frequency harmonic control network (LHCN). The specific design method is as follows.…”
Section: Broadband Output Matching Network Designmentioning
confidence: 99%
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“…The proposed output matching network based on DTL and device output parasitics is shown in Figure . It mainly has two stages.…”
Section: Design Of Inverse Class‐f Pa With Dual Transmission Linementioning
confidence: 99%