Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing

Yang, Xu; Yang, Xiaozhe; Kawai, Kentaro; Arima, Kenta; Yamamura, Kazuya

doi:10.1016/j.ijmachtools.2019.103431

Cited by 60 publications

(24 citation statements)

References 21 publications

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“…In addition, SiO 2 peak disappeared from the laser-grinded surface. The result proved that the oxide layer is SiO 2 [ 23 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

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Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Wang

2021

Micromachines

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In this paper, we first report the laser grinding method for a single-crystal silicon wafer machined by diamond sawing. 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectroscopy were utilized to characterize the surface quality of laser-grinded Si. Results show that SiO2 layer derived from mechanical machining process has been efficiently removed after laser grinding. Surface roughness Ra has been reduced from original 400 nm to 75 nm. No obvious damages such as micro-cracks or micro-holes have been observed at the laser-grinded surface. In addition, laser grinding causes little effect on the resistivity of single-crystal silicon wafer. The insights obtained in this study provide a facile method for laser grinding silicon wafer to realize highly efficient grinding on demand.

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“…In addition, SiO 2 peak disappeared from the laser-grinded surface. The result proved that the oxide layer is SiO 2 [ 23 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

“…In addition, SiO 2 peak disappeared from the laser-grinded surface. The result proved that the oxide layer is SiO 2 [23,24]. XPS analysis was used to identify the chemical nature of the single-crystal silicon wafer surface before and after surface modification.…”

Section: Effect Of Laser Grinding On Microstructure Evolutionmentioning

confidence: 99%

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Wang

2021

Micromachines

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“…The oxidation depth is about 2 µm according to the cross-sectional view along 1−2. Therefore, we can calculate that the material removal rate (MRR) of PEP-MP is about 21.8 µm/h, while the maximum MRR of other single-crystal 4H-SiC polishing technology is about 23 µm/h in Yang's [39] research, who use ECMP for the sliced single-crystal 4H-SiC planarization. The MRR of PEP-MP for BN-abrasive-lapped single-crystal 4H-SiC is close to the maximum MRR of ECMP for the sliced single-crystal 4H-SiC, but it is much bigger than the maximum MRR (3.62µm/h) of ECMP for the diamond-abrasive-lapped single-crystal 4H-SiC [14].…”

Section: Resultsmentioning

confidence: 99%

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

et al. 2021

Micromachines

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Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crystal 4H-SiC surfaces effectively. In the PEP-MP process, the single-crystal 4H-SiC surface is modified into a soft oxide layer, which is mainly made of SiO2 and a small amount of silicon oxycarbide by plasma electrolytic processing. Then, the modified oxide layer is easily removed by soft abrasives such as CeO2, whose hardness is much lower than that of single-crystal 4H-SiC. Finally a scratch-free and damage-free surface can be obtained. The hardness of the single-crystal 4H-SiC surface is greatly decreased from 2891.03 to 72.61 HV after plasma electrolytic processing. By scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) observation, the plasma electrolytic processing behaviors of single-crystal 4H-SiC are investigated. The scanning white light interferometer (SWLI) images of 4H-SiC surface processed by PEP-MP for 30 s shows that an ultra-smooth surface is obtained and the surface roughness decreased from Sz 607 nm, Ra 64.5 nm to Sz 60.1 nm, Ra 8.1 nm and the material removal rate (MRR) of PEP-MP is about 21.8 μm/h.

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“…It is based on the alternating effect of chemical reaction and mechanical removal to obtain ultra-precision polished SiC surfaces. Many approaches based on CMP have been made to polishing SiC wafers for smooth surfaces, notable among them electrochemical mechanical polishing (ECMP), 9,10 electrical enhanced photocatalysis polishing, 11 ultraviolet photocatalysis-assisted polishing, 12 and UV-photocatalysis assisted chemical mechanical polishing. 13 However, all the above polishing brings enormous difficulties obtaining atomically at smooth surface without subsurface damages.…”

Section: Introductionmentioning

confidence: 99%

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Yin

et al. 2021

RSC Adv.

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Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing

Cited by 60 publications

References 21 publications

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

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