Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

Abstract

Hybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Highly Efficient and Stable Self-Powered Perovskite Photodiode by Cathode-Side Interfacial Passivation with Poly(Methyl Methacrylate)

“…This increase in the water contact angle mainly stems from the intrinsic hydrophobicity of the PMMA layer in the sample film, providing evidence of the simple and reliable fabrication method of the PMMA passivation layer on the perovskite layer. Thus, such a hydrophobic PMMA passivation layer may affect the growth of the grains of the underlying MAPbI 3 perovskite by tailoring the nucleation of the perovskite crystal growth [ 3 , 13 , 27 ]. It is noteworthy that the coated PMMA polymers mainly existed at the perovskite/ETL interface, with some of the polymer possibly present inside the perovskite layer, similar to an earlier conjugated polymer that formed an interfacial passivation layer [ 20 ].…”

“…Given these characteristics, hybrid organic/inorganic perovskite materials are utilized in various optoelectronic devices such as PV or solar cells, light-emitting diodes, and especially in photodetectors [ 7 , 8 , 9 ]. In recent years, CH 3 NH 3 PbI 3 (MAPbI 3 ) organohalide perovskite photodetectors have shown significantly increased photo-detecting capabilities with rapid response times, with detectivity ( D *) values of ~7.8 × 10 12 Jones (Jones = cm Hz 1/2 /W) and responsivity ( R ) values close to 470 mA/W [ 10 , 11 , 12 , 13 ]. These results are slightly lower than or comparable to those of conventional silicon photodetectors ( D * ~1 × 10 13 Jones) [ 14 ].…”

3D Printed Skin‐Interfaced UV‐Visible Hybrid Photodetectors

“…Due to the electron‐blocking and hole‐transport properties of PEDOT:PSS, this anode layer helped to reduce the dark current of the photodetector. [ 36 ] After thermal curing, the silver electrodes and PEDOT:PSS layers exhibited shrinkage of ≈0.43% and 5.11%, respectively. The ternary hybrid active material (Figure 2E(ii)) was then deposited on the PEDOT:PSS layer, and a ring‐shaped silicone insulation layer (Figure 2E‐iii) was subsequently printed on the photosensitive layer.…”

Perovskite-Based Facile NiO/CH3NH3PbI3 Heterojunction Self-Powered Broadband Photodetector

“…The values of responsivity and detectivity for NiO/MAPI heterojunction PDs are analogous to the conventional perovskite-based PDs consisting of multilayers of ETL− perovskite−HTL, which include NiO as a front HTL contact layer. 47,48 Further, the NiO/MAPI heterojunction was subjected to 30 s illumination cycles with different probing wavelengths under self-powering mode (i.e., zero bias). Figure 7 shows the light-sensing cycles of the as-fabricated devices under illumination wavelength of different regions/colors.…”