2008
DOI: 10.1103/physrevb.77.073312
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Highly efficient single-photon emission from single quantum dots within a two-dimensional photonic band-gap

Abstract: We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ∼17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic… Show more

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Cited by 42 publications
(42 citation statements)
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“…So far, almost all investigations have focused on modifying the LDOS by fabricating a microcavity around the emitter. Such microcavities have been used to demonstrate the Purcell effect with InAs/GaAs quantum dots ͑QDs͒ emitting in the 800-1000 nm range [6][7][8][9] and more recently around 1300 nm. 10 However, modifications of the LDOS can also be obtained in structures supporting propagating modes, such as photonic crystal ͑PC͒ wires which have attracted considerable attention recently.…”
mentioning
confidence: 99%
“…So far, almost all investigations have focused on modifying the LDOS by fabricating a microcavity around the emitter. Such microcavities have been used to demonstrate the Purcell effect with InAs/GaAs quantum dots ͑QDs͒ emitting in the 800-1000 nm range [6][7][8][9] and more recently around 1300 nm. 10 However, modifications of the LDOS can also be obtained in structures supporting propagating modes, such as photonic crystal ͑PC͒ wires which have attracted considerable attention recently.…”
mentioning
confidence: 99%
“…This suggests the PC facilitates a ~3-fold enhancement of the extraction efficiency. 21 It is also interesting to note that the count rate is ~10 times higher than we observe from InAs QDs in GaAs PC cavities in our system, which we attribute to the improved efficiency of the Si CCD in this wavelength range and emphasises the advantage of this material system.…”
mentioning
confidence: 68%
“…Compared to QD in bulk materials, the external quantum efficiency of the emitters in PCs was enhanced 16 times [108]. Lately, Chauvin [27] demonstrated the SE enhancement from emitters in the 1550 nm telecommunication window.…”
Section: Se Control In Photonic Crystalsmentioning
confidence: 98%