Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO₂/Al/Polyimide Structure

Abstract

A highly flexible resistive switching (RS) memory was fabricated in the Al/TiO/Al/polyimide structure using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10 000 times, and over 4000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

“…Due to the advantages of low processing temperature, lightweight, human friendly interfaces, flexible transistors, organic light‐emitting devices, and bendable sensors have been proposed for flexible electronic applications. As a necessary part of electronics systems for data storage, memory plays an important role in flexible electronics . Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption.…”

“…[1][2][3] Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption. [1][2][3] Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption.…”

Comparison of Laser-Synthetized Nanographene-Based Electrodes for Flexible Supercapacitors

“…Flexible electronics are expected to bring out a revolution in diverse fields of technology, such as electronic skin [1,2], robotics [3,4] or health-monitoring devices [5][6][7], among others. Most of the recent advances in this context have been possible due to the emergence of new conductive and flexible materials, many of which have reported outstanding results in terms of electrical conduction and integration, such as the polycrystalline silicon (poly-Si) [8,9] or several semiconducting metal 2 of 14 oxides (e.g., SnO 2 , TiO 2 , ZnO or ITO) [10][11][12]. However, due to the complexity of their synthesis or the expensive fabrication processes required to obtained large-area samples, research groups are still exploring different alternatives that enable an inexpensive and massive fabrication of flexible electronics devices.…”

Transparent and soluble polyimide films containing 4,4′‐isopropylidenedicyclohexanol (Cis‐HBPA) units: Preparation, characterization, thermal, mechanical, and dielectric properties

“…Excellent performance of polyimides like highly mechanical and thermally stable, electrical, wide chemical resistance, and relatively low dielectric constants, and so forth makes themselves attractive candidates in microelectronic and aerospace engineering . Over the past years, numerous diamines or dianhydrides are designed aiming to obtain polyimides with ultralow dielectric constant, high glass transition temperature, good biocompatibility, low coefficient of linear expansion, ultrahigh tensile strength, optoelectronic and gas separation properties, and so forth, Nevertheless, most of these polyimides based on aromatic building blocks can easily lead to defects like insolubility and low transmittance and hence impede their molding processing and application in optoelectronic devices.…”