Herein, a simple, green, and low-cost way was developed in the synthesis of fluorescent nitrogen-doped carbon nanoparticles (FNCPs) with nitrogen content of 6.88%, using one-pot hydrothermal treatment of strawberry juice. The as-prepared FNCPs exhibited a maximum emission at 427 nm with a quantum yield of 6.3%, which could be specifically quenched by Hg 2+ . This phenomenon was used to develop a fluorescent method for facile detection of Hg 2+ with a linear range from 10 nM to 50 µM and a detection limit of 3 nM (S/N = 3), and further extended to measure environmental water samples with satisfactory recovery. This study provides a green strategy in the synthesis of FNCPs to detect Hg 2+ with good performance.Fluorescent nitrogen-doped carbon nanoparticles (FNCPs) were synthesized by one-pot hydrothermal treatment of strawberry juice. The strategy was simple, green, and low-cost. The as-prepared FNCPs showed some excellent properties such as water-soluble and good stability, which was applied as an Hg 2+ sensor with high sensitivity and selectivity.

important role in flexible electronics. [1][2][3] Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption. Thus, they have been considered as promising candidates for charge-based memory and Flash. [4,5] In terms of flexible RRAM (FRRAM) applications, the investigations mainly focus on device processing, resistive switching (RS) behaviors, and mechanical flexibilities. [6][7][8] Many efforts have been devoted to achieve high performance FRRAMs with both small RS parameters variation and excellent flexibility. One of the representative obstacles is the nonuniformity of RS parameters, which leads to false programming and gives rise to readout hazards. [9,10] Some FRRAMs demonstrated fast programming speed, large storage window, excellent flexibility, and mechanical endurance. However, the coefficients of variation for the RS parameters were unexpectedly high. [10] On the basis of conducting filament (CF) theory in RRAM devices, the switching mechanism is highly depended on the CF formation/disruption during the writing/programming process, which in turn affects the device performance. As concerned as the valence change memory (VCM) RRAM, oxygen vacancies play an important role in a redox reaction, which determines the filament morphology. In order to enhance the performance and improve the distribution of switching parameters, bilayer RS structure such as /indium tin oxide (ITO), is proposed. Such RS layer can control the formation/rupture of CF consisting of oxygen vacancies. [11][12][13] HfO 2 and TiO 2 are typical high dielectric constant transition metal oxides in complementary metal oxide semiconductor (CMOS) integrated circuit applications. Due to the simple compositions and good compatibilities with CMOS processing, they have been widely investigated for memory device applications. [14] Especially, HfO 2 /TiO 2 bilayer structure has exhibited desired features, including self-rectification, multiple resistance states, self compliance, and stable bipolar RS property. [14,15] Bilayer structure based RRAM can operate at low voltage, which decreases the heat accumulation in the operating process and reduces the power consumption. [16] Thus, it is speculated that the stability of bilayer HfO 2 /TiO 2 FRRAM device will be improved by avoiding the undesirable heating during the read/write process. The low energy consumptions and high stabilities are highly desirable for wearable electronic applications.The authors declare no conflict of interest. Figure 6. a) The 1000th, 1500th, and 2000th I-V curves taken on FRRAM device. b) I-V curves at different stop voltages ranged between −1.3 and −1.6 V with step of 0.1 V.www.advancedsciencenews.com

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