Highly flexible titanium dioxide-based resistive switching memory with simple fabrication

Abstract

We demonstrate a flexible resistive switching random access memory (ReRAM), which is a promising next-generation memory on a flexible substrate. The proposed method enables us to fabricate an Al/TiO2/Al structure on a polyimide substrate, which has highly flexible and durable characteristics, rather than a Si-based substrate by a simple fabrication process. To understand the role of oxygen vacancies in TiO2, our devices was analyzed by X-ray photoelectron spectroscopy (XPS) and XPS depth profile analyses. Moreover, severe bending of the device did not affect the memory performance owing to its small channel length and the high ductility of the electrode. The results presented here can provide a new approach to the fabrication of nonvolatile memories for flexible electronic devices.

Flexible one diode-one resistor composed of ZnO/poly (fluorene-alt-benzothiadiazole) (PFBT) heterojunction diode and TiO2 resistive memory

“…Previous studies of TiO 2 based memory films showed that the switching mechanism is dominated by oxygen ion and vacancies [34,35]. Yeom et al reported that switching mechanism of the Al/TiO 2 /Al can be attributed to the oxygen vacancies in the TiO 2 layer near the anode [36]. The switching mechanism of our 1D1R may be dominated by oxygen vacancy filaments.…”

High on–off current ratio titanium oxynitride write-once-read-many-times memory

“…The chemical compositions analyzed from the O 1s spectrum are consistent with those found in the Ti 2p spectrum. The peak induced by nonlattice oxygen, which is related to oxygen vacancy defect, is supposed to be at 532.5 eV [33,34]. Nevertheless, an obvious peak at this binding energy is not found, which suggests a low oxygen-vacancy defect content in the TiO x N y RS layer.…”

Transparent resistive switching memory using aluminum oxide on a flexible substrate

“…Towards achieving better ReRAM characteristics, various studies have been conducted to investigate resistive switching phenomena in different materials [12]. Metal oxides such as Ta 2 O 5 [13], ZrO 2 [14], Cu 2 O [15], TiO 2 [16], and Al 2 O 3 [17] in particular have received much attention for use in fabricating ReRAMs because of their good compatibility with semiconductor manufacturing technologies and low-cost fabrication. Among these materials, Al 2 O 3 has promising characteristics such as resistive switching properties, as well as their wide band gap, large breakdown electric field, high permittivity, and good thermal stability.…”