Highly hydrogen-sensitive SnO2 nanoscale-particle films with platinum electrodes

Influences of heat-treatment and measurement atmosphere on the electrochemical property of Pt–SnO device

“…Thus, the Schottky barrier height at the interface between Pt and SnO 2 is 1.16 eV. In the previous report, electrochemical measurements in pure nitrogen clarified the existence of Schottky barrier at the interface [13]. In the present study, I-V characteristics of Pt-SnO x device were measured at 25 • C in air as shown in Fig.…”

“…The I-V curve exhibited the ohmic behavior after the reduction. According to the previous researches, this phenomenon was attributed to the reduction of Schottky barrier height by the dissolution of hydrogen atom into metal bulk [9,10,13]. The dissolved hydrogen atom lowers the work function of Pt because hydrogen atom is an electron donor.…”

“…This result indicated the diffusion of hydrogen atom and metal species into the constituent material even at 90 • C. An ohmic-like characteristic appeared in CO although the obtained current was much smaller than that in H 2 . Unlike hydrogen atom, carbon monoxide cannot diffuse into the metal bulk [13]. In the CO atmosphere, the Schottky barrier height was lowered by the adsorbed CO molecules since carbon monoxide is also a donor-type species.…”

“…improves the sensitivity, selectivity, and stability of gas sensors [7][8][9][10][11][12][13][14][15][16]. The Pt-SnO 2 gas sensor enables to monitor low concentrations of H 2 , NH 3 , NO x , SO x , CO, and hydrocarbons [10,13,15,16]. In such a sensor, the adsorption of gaseous species on constituent materials and the electron transfer at the interface play an important role in the sensing process.…”

SnO2Nanostructure as Pollutant Gas Sensors: Synthesis, Sensing Performances, and Mechanism

“…Lu et al [22] conducted experiments to obtain SnO 2 nanoparticles by using the thermal oxidation method and the resulting layer was then used for H 2 gas sensors. Preparation of SnO 2 nanoparticles in these experiments used a substrate made of SiO 2 with a thickness of 100 nm.…”